800 MHz Other Function Transistors 40

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

C5T3904

Texas Instruments

NPN

SINGLE

YES

800 MHz

.35 W

.2 A

1

Other Transistors

30

150 Cel

BLY53A

Texas Instruments

NPN

SINGLE

NO

800 MHz

8 W

1 A

1

Other Transistors

10

150 Cel

2N3832

Texas Instruments

NPN

SINGLE

NO

800 MHz

.2 W

.035 A

1

Other Transistors

20

175 Cel

2SC3597F

Onsemi

NPN

SINGLE

NO

800 MHz

10 W

.5 A

1

Other Transistors

160

150 Cel

2SC3597C

Onsemi

NPN

SINGLE

NO

800 MHz

10 W

.5 A

1

Other Transistors

40

150 Cel

2SC3597

Onsemi

NPN

SINGLE

NO

800 MHz

10 W

.5 A

1

Other Transistors

40

150 Cel

2SA1403

Onsemi

PNP

SINGLE

NO

800 MHz

1.2 W

.5 A

1

Other Transistors

40

140 Cel

2SA1403F

Onsemi

PNP

SINGLE

NO

800 MHz

1.2 W

.5 A

1

Other Transistors

160

140 Cel

2SA1403C

Onsemi

PNP

SINGLE

NO

800 MHz

1.2 W

.5 A

1

Other Transistors

40

140 Cel

BFQ236AT/R

NXP Semiconductors

NPN

SINGLE

YES

800 MHz

2 W

.3 A

1

Other Transistors

20

175 Cel

BF362

Infineon Technologies

NPN

SINGLE

YES

800 MHz

.12 W

.02 A

1

Other Transistors

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC555

Toshiba

NPN

SINGLE

NO

800 MHz

4 W

.4 A

1

Other Transistors

10

175 Cel

Tin/Lead (Sn/Pb)

e0

2SC385A

Toshiba

NPN

SINGLE

NO

800 MHz

.2 W

.02 A

1

Other Transistors

20

125 Cel

Tin/Lead (Sn/Pb)

e0

2SC397

Toshiba

NPN

SINGLE

NO

800 MHz

.2 W

.05 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

2SC4829C

Renesas Electronics

NPN

SINGLE

NO

800 MHz

.9 W

.2 A

1

Other Transistors

100

150 Cel

2SC4829B

Renesas Electronics

NPN

SINGLE

NO

800 MHz

.9 W

.2 A

1

Other Transistors

60

150 Cel

2SA1462Y34-T2B-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

75

150 Cel

2SA1462-T1B-A

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

TIN BISMUTH

e6

2SA1462-T2B-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610Y34-T2-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

75

150 Cel

2SA1462-T1B-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610-T1

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462Y33-T1B-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610Y34-T1-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

75

150 Cel

2SA1462-T2B-A

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

TIN BISMUTH

e6

2SA1610-T2

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610-T1-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462Y34-T1B-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

75

150 Cel

2SA1610Y33-T1-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462Y34-L

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

75

150 Cel

2SA1610Y33-T2-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610-T2-A

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

TIN BISMUTH

e6

2SA1462-T1B

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462Y33-L

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462-T2B

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610-T2-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462-L

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1462Y33-T2B-AT

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.2 W

.05 A

1

Other Transistors

50

150 Cel

2SA1610-T1-A

Renesas Electronics

PNP

SINGLE

YES

800 MHz

.15 W

.05 A

1

Other Transistors

50

150 Cel

TIN BISMUTH

e6

MMBTH17

Samsung

NPN

SINGLE

YES

800 MHz

.35 W

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.