NPN AND PNP Other Function Transistors 21

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

PBLS4002YT1-135

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS4005Y-135

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

40

SILICON

PBLS4003YT2-165

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS2024D,115

NXP Semiconductors

NPN AND PNP

YES

.76 W

.1 A

2

Other Transistors

60

TIN

1

e3

30

260

PBLS4005Y-125

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

40

SILICON

PBLS4005Y-165

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

40

SILICON

PBLS4003DT/R

NXP Semiconductors

NPN AND PNP

YES

.6 W

1 A

2

Other Transistors

30

SILICON

PBLS4005DT/R

NXP Semiconductors

NPN AND PNP

YES

.6 W

1 A

2

Other Transistors

80

PBLS4004DT/R

NXP Semiconductors

NPN AND PNP

YES

.6 W

1 A

2

Other Transistors

60

PBLS4003YT2-125

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS6024D,115

NXP Semiconductors

NPN AND PNP

YES

.76 W

1.5 A

2

Other Transistors

120

SILICON

TIN

1

e3

30

260

PBLS6023D,115

NXP Semiconductors

NPN AND PNP

YES

.76 W

1.5 A

2

Other Transistors

120

SILICON

TIN

1

e3

30

260

PBLS4002YT1-115

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS4001DT/R

NXP Semiconductors

NPN AND PNP

YES

.6 W

1 A

2

Other Transistors

30

PBLS4002DT/R

NXP Semiconductors

NPN AND PNP

YES

.6 W

1 A

2

Other Transistors

30

PBLS2024D/DG

NXP Semiconductors

NPN AND PNP

YES

.76 W

.1 A

2

Other Transistors

60

PBLS4003YT1-115

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS6021D,115

NXP Semiconductors

NPN AND PNP

YES

.76 W

1.5 A

2

Other Transistors

30

TIN

1

e3

30

260

PBLS4003YT1-135

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS4002YT2-125

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

PBLS4002YT2-165

NXP Semiconductors

NPN AND PNP

YES

.3 W

.1 A

2

Other Transistors

30

SILICON

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.