Infineon Technologies Other Function Transistors 662

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BCX74-40

Infineon Technologies

NPN

SINGLE

NO

100 MHz

.625 W

.8 A

1

Other Transistors

250

150 Cel

MMBT3904-E6433

Infineon Technologies

NPN

SINGLE

YES

300 MHz

.33 W

.2 A

1

Other Transistors

100

150 Cel

BFR360T-E6433

Infineon Technologies

NPN

SINGLE

YES

10000 MHz

.21 W

.035 A

1

Other Transistors

60

150 Cel

BCX58IX

Infineon Technologies

NPN

SINGLE

NO

200 MHz

.45 W

.1 A

1

Other Transistors

220

150 Cel

SMBTA64-E6433

Infineon Technologies

PNP

SINGLE

YES

125 MHz

.33 W

.5 A

1

Other Transistors

10000

150 Cel

BC847BF-E6327

Infineon Technologies

NPN

SINGLE

YES

.25 W

.1 A

1

Other Transistors

200

150 Cel

MMBTA56-E6433

Infineon Technologies

PNP

SINGLE

YES

.33 W

.5 A

1

Other Transistors

100

150 Cel

SMBT3906L3-E6327

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.2 A

1

Other Transistors

30

150 Cel

MMBTA56-E6327

Infineon Technologies

PNP

SINGLE

YES

.33 W

.5 A

1

Other Transistors

100

150 Cel

BC858BF-E6433

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

220

150 Cel

BCX76-25

Infineon Technologies

PNP

SINGLE

NO

100 MHz

.625 W

.8 A

1

Other Transistors

160

150 Cel

MMBT3904-E6327

Infineon Technologies

NPN

SINGLE

YES

300 MHz

.33 W

.2 A

1

Other Transistors

100

150 Cel

BC856UE6327

Infineon Technologies

PNP

YES

.1 A

Other Transistors

200

150 Cel

TIN

1

e3

260

BCW66KG-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

160

150 Cel

1

260

MMBTA13-E6433

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

5000

150 Cel

BCX55H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

2 W

1 A

1

Other Transistors

40

150 Cel

TIN

1

e3

BCX73-16

Infineon Technologies

NPN

SINGLE

NO

100 MHz

.625 W

.8 A

1

Other Transistors

100

150 Cel

BC857BTE6327

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

220

150 Cel

1

260

BFR949FE6327

Infineon Technologies

NPN

SINGLE

YES

7000 MHz

.25 W

.035 A

1

Other Transistors

100

150 Cel

BC856S-E6327

Infineon Technologies

PNP

YES

.25 W

.1 A

Other Transistors

200

150 Cel

1

260

BCX51-6

Infineon Technologies

PNP

SINGLE

YES

125 MHz

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

SMBTA93

Infineon Technologies

PNP

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

BC556VI

Infineon Technologies

PNP

SINGLE

NO

150 MHz

.5 W

.1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBT3906-E6433

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.33 W

.2 A

1

Other Transistors

30

150 Cel

BC546VI

Infineon Technologies

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

BC858AT-E6327

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

125

150 Cel

MMBTA14-E6327

Infineon Technologies

NPN

DARLINGTON

YES

125 MHz

.33 W

.3 A

Other Transistors

10000

150 Cel

JANTXVF2N7423

Infineon Technologies

P-CHANNEL

SINGLE

NO

4 W

ENHANCEMENT MODE

1

14 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

14 A

e0

BC807U-E6433

Infineon Technologies

PNP

YES

.5 A

Other Transistors

40

150 Cel

BC558VI

Infineon Technologies

PNP

SINGLE

NO

150 MHz

.5 W

.1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBT3906-E6327

Infineon Technologies

PNP

SINGLE

YES

250 MHz

.33 W

.2 A

1

Other Transistors

30

150 Cel

BCX56-6

Infineon Technologies

NPN

SINGLE

YES

50 MHz

1 W

1 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

BFT97

Infineon Technologies

NPN

SINGLE

YES

.2 W

.03 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BC847BL3-E6327

Infineon Technologies

NPN

SINGLE

YES

.25 W

.1 A

1

Other Transistors

200

150 Cel

1

260

BC238-B

Infineon Technologies

NPN

SINGLE

NO

150 MHz

.35 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

BC857BL3-E6327

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

220

150 Cel

1

260

BFT98T

Infineon Technologies

NPN

SINGLE

YES

.8 W

.15 A

1

Other Transistors

175 Cel

BC548VI

Infineon Technologies

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.