Samsung Other Function Transistors 202

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

KSD5058

Samsung

NPN

SINGLE

NO

60 W

5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

HMF06110-100

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

SMF06310

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

180 Cel

MMBC1009F4

Samsung

NPN

SINGLE

YES

150 MHz

.35 W

.05 A

1

Other Transistors

90

150 Cel

Tin/Lead (Sn/Pb)

e0

MPS4249

Samsung

PNP

SINGLE

NO

40 MHz

.2 W

.2 A

1

Other Transistors

100

125 Cel

Tin/Lead (Sn/Pb)

e0

KSC1061

Samsung

NPN

SINGLE

NO

7 MHz

40 W

4 A

1

Other Transistors

80

150 Cel

Tin/Lead (Sn/Pb)

e0

IRF9122

Samsung

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

SMF06300

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

180 Cel

SFM9014

Samsung

P-CHANNEL

SINGLE

YES

2.8 W

ENHANCEMENT MODE

1

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

HMF03100C100

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

HMF06000M

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

CS501300

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

175 Cel

MPSD01

Samsung

NPN

SINGLE

NO

40 MHz

.625 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBA811C6

Samsung

PNP

SINGLE

YES

75 MHz

.225 W

.05 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

IRF9221

Samsung

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

IRF9233

Samsung

P-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

MJD29

Samsung

NPN

SINGLE

YES

3 MHz

15 W

1 A

1

Other Transistors

15

140 Cel

Tin/Lead (Sn/Pb)

e0

MPS4250A

Samsung

PNP

SINGLE

NO

40 MHz

.2 W

.1 A

1

Other Transistors

125 Cel

Tin/Lead (Sn/Pb)

e0

MPSD51

Samsung

PNP

SINGLE

NO

40 MHz

.625 W

.5 A

1

Other Transistors

25

150 Cel

Tin/Lead (Sn/Pb)

e0

2N7151

Samsung

N-CHANNEL

.8 A

Other Transistors

METAL SEMICONDUCTOR

7.5 W

300 Cel

.8 A

IRF9222

Samsung

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

KSD5006

Samsung

NPN

SINGLE

NO

3 MHz

120 W

5 A

1

Other Transistors

8

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBA812M3

Samsung

PNP

SINGLE

YES

.225 W

.1 A

1

Other Transistors

60

150 Cel

Tin/Lead (Sn/Pb)

e0

MMBC1009F2

Samsung

NPN

SINGLE

YES

150 MHz

.35 W

.05 A

1

Other Transistors

40

150 Cel

Tin/Lead (Sn/Pb)

e0

SFW9540

Samsung

P-CHANNEL

SINGLE

YES

132 W

ENHANCEMENT MODE

1

17 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

17 A

HMF03100S100

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

SMF03140-200

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

180 Cel

HMF06100M100

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

IRFP9121

Samsung

HMF06300C

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

KSC1520

Samsung

NPN

SINGLE

NO

80 MHz

10 W

.2 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

HMF03300M

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

HMF24030-200

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

HMF03100M300

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

SMF06000

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

180 Cel

KSA812D1G

Samsung

PNP

SINGLE

YES

.15 W

.1 A

1

Other Transistors

200

150 Cel

IRFP9223

Samsung

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

MMBC1623L6

Samsung

NPN

SINGLE

YES

150 MHz

.225 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

IRF9223

Samsung

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

IRF9232

Samsung

P-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

HMF24000M200

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

MMBC1623L4

Samsung

NPN

SINGLE

YES

150 MHz

.225 W

.1 A

1

Other Transistors

90

150 Cel

Tin/Lead (Sn/Pb)

e0

HMF06020

Samsung

N-CHANNEL

.12 A

Other Transistors

METAL SEMICONDUCTOR

.25 W

250 Cel

.12 A

MJD29C

Samsung

NPN

SINGLE

YES

3 MHz

15 W

1 A

1

Other Transistors

15

150 Cel

Tin/Lead (Sn/Pb)

e0

SMF12100

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

180 Cel

IRF9220

Samsung

P-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

HMF24000S200

Samsung

N-CHANNEL

Other Transistors

METAL SEMICONDUCTOR

250 Cel

SFI9540

Samsung

P-CHANNEL

SINGLE

NO

132 W

ENHANCEMENT MODE

1

17 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

17 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.