DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Power Bipolar Junction Transistors (BJT) 1,480

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

TIP120BU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX33BBG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP101BC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6388BV

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6387BC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SD2663

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 MHz

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1500

SILICON

100 V

TIN SILVER COPPER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

TO-126

e2

TIP127DW

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5740DW

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

300 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP115AF

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5742BA

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5742DW

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP115AJ

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5740AF

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

SILICON

300 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP117AN

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP102AJ

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP120AS

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP127AU

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34CAN

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34CBC

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP107AN

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP106AS

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP120BC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP107AK

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX33BAK

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP127AJ

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP102BA

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX33CAS

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP126BC

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX33CAF

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34BBA

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJH11017G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

150 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

150 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

BDX34BBV

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP110BD

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP112BC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

2 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP120BD

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5740BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

300 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP122BC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SD1828

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 MHz

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1500

SILICON

100 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.03

TIP105BC

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP100AK

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX33B

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

70 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

235

MJD6039

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

1.75 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

500

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

TIP126TU

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

65 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

TIP105G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

80 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

200

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

260

BDX34CAS

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP125AN

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP121BU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP125BV

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

5 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.