.7 A Power Bipolar Junction Transistors (BJT) 49

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2N3053PBFREE

Central Semiconductor

NPN

SINGLE

NO

100 MHz

5 W

.7 A

METAL

1.4 V

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

15 pF

SILICON

40 V

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-MBCY-W3

TO-39

e3

2N3053APBFREE

Central Semiconductor

NPN

SINGLE

NO

100 MHz

5 W

.7 A

METAL

.3 V

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

15 pF

SILICON

60 V

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-MBCY-W3

TO-39

e3

2N3053ATIN/LEAD

Central Semiconductor

NPN

SINGLE

NO

100 MHz

5 W

.7 A

METAL

.3 V

WIRE

ROUND

1

3

CYLINDRICAL

50

200 Cel

15 pF

SILICON

60 V

-65 Cel

TIN LEAD

BOTTOM

O-MBCY-W3

TO-39

e0

PCP1208-TD-H

Onsemi

NPN

SINGLE

YES

3.5 W

.7 A

1

Other Transistors

200

150 Cel

TIN BISMUTH

1

e6

30

260

AML2002

Onsemi

NPN

SINGLE

NO

120 MHz

.7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

SILICON

200 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

ISOLATED

TO-126

2SB805KL-T2

Renesas Electronics

PNP

SINGLE

YES

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KR-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

120 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

2SB805KL-T1

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB805KM-T1

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB805KL

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB805KK-T2

Renesas Electronics

PNP

SINGLE

YES

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KR-T1

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

120 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806-T1-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

120 V

SINGLE

R-PSSO-F3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

2SB805KK-T1

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KR-T2

Renesas Electronics

PNP

SINGLE

YES

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB805-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

10

260

2SB806-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

120 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

10

260

2SB805KM

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB806KP-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

120 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

2SB805KM-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

2SB806KQ-T1

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

120 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KQ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB806KP-T2

Renesas Electronics

PNP

SINGLE

YES

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KR

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB805

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB805KK

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB806

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB805KK-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

200

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

2SB806-T2-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

120 V

SINGLE

R-PSSO-F3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

2SB805KM-T2

Renesas Electronics

PNP

SINGLE

YES

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KQ-T2

Renesas Electronics

PNP

SINGLE

YES

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SB806KP

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SB806KQ-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

120 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

2SB805KL-AZ

Renesas Electronics

PNP

SINGLE

YES

75 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

135

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

NOT SPECIFIED

NOT SPECIFIED

2SB806KP-T1

Renesas Electronics

PNP

SINGLE

YES

75 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

120 V

SINGLE

R-PSSO-F3

1

COLLECTOR

Not Qualified

2SD1006HK-AZ

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD1006-AZ

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

TIN BISMUTH

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e6

10

260

2SD1007HQ

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

120 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1006

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1006HM

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1007HP

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

120 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1006HL

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

135

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1006-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

90 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

2SD1006HM-AZ

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

100 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SD1006HK

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1007HR

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

120 V

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

2SD1007

Renesas Electronics

NPN

SINGLE

YES

90 MHz

2 W

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

90

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSSO-F3

COLLECTOR

Not Qualified

e0

2SD1007-T1-AZ

Renesas Electronics

NPN

SINGLE

YES

90 MHz

.7 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

90

SILICON

120 V

SINGLE

R-PSSO-F3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.