10 A Power Bipolar Junction Transistors (BJT) 932

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

2N6387BA

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45H10BS

Onsemi

PNP

SINGLE

NO

40 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34CAJ

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H10AJ

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34CDW

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJB45H11

Onsemi

PNP

SINGLE

YES

40 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

80 V

Tin/Lead (Sn80Pb20)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

235

2N6387BD

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE3055TDW

Onsemi

NPN

SINGLE

NO

2 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34CBG

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

D44H10BS

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJH10012

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

118 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

20

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-218

e0

235

D44H10AN

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SD1192

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

2000

SILICON

60 V

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

SINGLE

R-PSFM-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.03

TO-220AB

e2

MJE18009

Onsemi

NPN

SINGLE

NO

12 MHz

150 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

7

150 Cel

SILICON

450 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

235

D44H11BC

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34BAU

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34BAJ

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34CAK

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJD44E3T4

Onsemi

NPN

DARLINGTON

YES

20 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

235

BDX33CBC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX34BBU

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE18009AS

Onsemi

NPN

SINGLE

NO

12 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

7

150 Cel

SILICON

450 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H8BU

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H10BU

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE3055TAK

Onsemi

NPN

SINGLE

NO

2 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDX33BAN

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6388DW

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6387AU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP146F

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

SILICON

80 V

SINGLE

R-PSFM-T3

ISOLATED

BUILT IN BIAS RESISTANCE RATIO IS 0.02

MJD3055

Onsemi

NPN

SINGLE

YES

2 MHz

20 W

10 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

5

140 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

235

D45H11AJ

Onsemi

PNP

SINGLE

NO

40 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJD44E3-1

Onsemi

NPN

DARLINGTON

NO

20 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

e0

BDX34CBS

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP147F

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

500

SILICON

100 V

SINGLE

R-PSFM-T3

ISOLATED

BUILT IN BIAS RESISTANCE RATIO IS 0.02

D45H8BS

Onsemi

PNP

SINGLE

NO

40 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45H10AK

Onsemi

PNP

SINGLE

NO

40 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SC5450

Onsemi

NPN

SINGLE

NO

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

4

SILICON

800 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

HIGH RELIABILITY

BDX33BDW

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE2955TBC

Onsemi

PNP

SINGLE

NO

2 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45H8BU

Onsemi

PNP

SINGLE

NO

40 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H8AF

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP145G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

125 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-218

e3

260

D44H8BD

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE2955TAJ

Onsemi

PNP

SINGLE

NO

2 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE18009BG

Onsemi

NPN

SINGLE

NO

12 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

7

150 Cel

SILICON

450 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BDX34BAS

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

750

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE2955TAU

Onsemi

PNP

SINGLE

NO

2 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H11DW

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.