25 A Power Bipolar Junction Transistors (BJT) 86

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

TIP35C

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP36C

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP35CW

STMicroelectronics

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

TIP35CG

Onsemi

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

TIP36CG

Onsemi

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

TIP35CP

STMicroelectronics

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP36CW

STMicroelectronics

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

TIP36CP

STMicroelectronics

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N6341G

Onsemi

NPN

SINGLE

NO

40 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

12

200 Cel

SILICON

150 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

MG25M1BK1

Toshiba

NPN

COMPLEX

NO

25 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

100

SILICON

880 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

2SD2083

Allegro MicroSystems

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 MHz

120 W

25 A

PLASTIC/EPOXY

SWITCHING

1.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

120 W

2000

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

BUILT-IN BIAS RESISTOR RATIO IS 0.05

e0

2N5885G

Onsemi

NPN

SINGLE

NO

4 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

4

200 Cel

SILICON

60 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

TIP35B

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BD250A

Texas Instruments

PNP

SINGLE

NO

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

60 V

SINGLE

R-PSFM-T3

2N511B

Texas Instruments

PNP

SINGLE

NO

.26 MHz

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

2

FLANGE MOUNT

Other Transistors

20

100 Cel

GERMANIUM

45 V

BOTTOM

O-MBFM-D2

COLLECTOR

Not Qualified

BD250B

Texas Instruments

PNP

SINGLE

NO

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

80 V

SINGLE

R-PSFM-T3

2N511

Texas Instruments

PNP

SINGLE

NO

.26 MHz

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

2

FLANGE MOUNT

Other Transistors

20

100 Cel

GERMANIUM

30 V

BOTTOM

O-MBFM-D2

COLLECTOR

Not Qualified

2N512B

Texas Instruments

PNP

SINGLE

NO

.28 MHz

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

2

FLANGE MOUNT

Other Transistors

20

100 Cel

GERMANIUM

45 V

BOTTOM

O-MBFM-D2

COLLECTOR

Not Qualified

2N3265

Texas Instruments

NPN

SINGLE

NO

20 MHz

125 W

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

3

POST/STUD MOUNT

Other Transistors

20

175 Cel

SILICON

90 V

UPPER

O-MUPM-D3

COLLECTOR

Not Qualified

TO-63

2N3263

Texas Instruments

NPN

SINGLE

YES

20 MHz

83 W

25 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

GULL WING

ROUND

1

3

DISK BUTTON

Other Transistors

20

175 Cel

SILICON

90 V

RADIAL

O-CRDB-G3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BD250C

Texas Instruments

PNP

SINGLE

NO

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

100 V

SINGLE

R-PSFM-T3

2N3264

Texas Instruments

NPN

SINGLE

YES

20 MHz

83 W

25 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

GULL WING

ROUND

1

3

DISK BUTTON

Other Transistors

20

175 Cel

SILICON

60 V

RADIAL

O-CRDB-G3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N3266

Texas Instruments

NPN

SINGLE

NO

20 MHz

125 W

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

3

POST/STUD MOUNT

Other Transistors

20

175 Cel

SILICON

60 V

UPPER

O-MUPM-D3

COLLECTOR

Not Qualified

TO-63

2N512A

Texas Instruments

PNP

SINGLE

NO

.28 MHz

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

2

FLANGE MOUNT

Other Transistors

20

100 Cel

GERMANIUM

40 V

BOTTOM

O-MBFM-D2

COLLECTOR

Not Qualified

2N514B

Texas Instruments

PNP

SINGLE

NO

.43 MHz

80 W

25 A

1

Other Transistors

25

100 Cel

GERMANIUM

80 V

Not Qualified

2N512

Texas Instruments

PNP

SINGLE

NO

.28 MHz

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

2

FLANGE MOUNT

Other Transistors

20

100 Cel

GERMANIUM

30 V

BOTTOM

O-MBFM-D2

COLLECTOR

Not Qualified

2N511A

Texas Instruments

PNP

SINGLE

NO

.26 MHz

25 A

METAL

SWITCHING

SOLDER LUG

ROUND

1

2

FLANGE MOUNT

Other Transistors

20

100 Cel

GERMANIUM

40 V

BOTTOM

O-MBFM-D2

COLLECTOR

Not Qualified

BD250

Texas Instruments

PNP

SINGLE

NO

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

45 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

TIXH702

Texas Instruments

NPN

SEPARATE, 2 ELEMENTS

NO

25 A

UNSPECIFIED

SWITCHING

SOLDER LUG

RECTANGULAR

2

6

FLANGE MOUNT

12

SILICON

300 V

UPPER

R-XUFM-D6

Not Qualified

TIP35

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

40 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP36B

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP35A

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP36

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

40 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP36A

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SC3988M

Onsemi

NPN

SINGLE

NO

18 MHz

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

500 V

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

SINGLE

R-PSFM-T3

Not Qualified

HIGH RELIABILITY

TO-218

e2

2N6438

Onsemi

PNP

SINGLE

NO

40 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

12

200 Cel

SILICON

120 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

235

2N5886G

Onsemi

NPN

SINGLE

NO

4 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

4

200 Cel

SILICON

80 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

2N6437

Onsemi

PNP

SINGLE

NO

40 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

12

200 Cel

SILICON

100 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

2N6436

Onsemi

PNP

SINGLE

NO

40 MHz

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

12

SILICON

80 V

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

2N5884G

Onsemi

PNP

SINGLE

NO

4 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

4

200 Cel

SILICON

80 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

2N5883G

Onsemi

PNP

SINGLE

NO

4 MHz

200 W

25 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

4

200 Cel

SILICON

60 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

TIP35AG

Onsemi

NPN

SINGLE

NO

3 MHz

125 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

2SC4110M

Onsemi

NPN

SINGLE

NO

20 MHz

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

400 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

HIGH RELIABILITY

BD249CG

Onsemi

NPN

SINGLE

NO

3 MHz

3 W

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

140 Cel

SILICON

100 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-218

e3

260

2SC4461M

Onsemi

NPN

SINGLE

NO

18 MHz

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

500 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

2SC4110L

Onsemi

NPN

SINGLE

NO

20 MHz

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

15

SILICON

400 V

SINGLE

R-PSFM-T3

HIGH RELIABILITY

2SC4110

Onsemi

NPN

SINGLE

NO

20 MHz

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

10

SILICON

400 V

SINGLE

R-PSFM-T3

HIGH RELIABILITY

2SD1841P

Onsemi

NPN

SINGLE

NO

25 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

50

SILICON

100 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

TO-218

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.