8 A Power Bipolar Junction Transistors (BJT) 1,061

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

MJE5852AK

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP102AJ

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE16106AS

Onsemi

NPN

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE16106AJ

Onsemi

NPN

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5852AS

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP107AN

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP106AS

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJD45H11-1

Onsemi

PNP

SINGLE

NO

40 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e0

TIP107AK

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5851AF

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

350 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE18206AS

Onsemi

NPN

SINGLE

NO

13 MHz

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5850AF

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

300 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP102BA

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5852BV

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5740BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

300 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP105BC

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP100AK

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJW21191

Onsemi

PNP

SINGLE

NO

4 MHz

100 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

150 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AE

e0

235

TIP105G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

80 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

200

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

260

MJE15030BC

Onsemi

NPN

SINGLE

NO

30 MHz

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

150 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5741AJ

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

SILICON

350 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE15031BA

Onsemi

PNP

SINGLE

NO

30 MHz

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

150 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5850DW

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

300 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5741AU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

350 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE18008BC

Onsemi

NPN

SINGLE

NO

13 MHz

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6

150 Cel

SILICON

450 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP100BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MJE15030DW

Onsemi

NPN

SINGLE

NO

30 MHz

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

150 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE18008

Onsemi

NPN

SINGLE

NO

13 MHz

125 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

6

150 Cel

SILICON

450 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

235

TIP100BD

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP105BU

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP131G

Onsemi

NPN

DARLINGTON

NO

70 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

260

MJE16106DW

Onsemi

NPN

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

6

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE18206BA

Onsemi

NPN

SINGLE

NO

13 MHz

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE15031BS

Onsemi

PNP

SINGLE

NO

30 MHz

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

150 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP102BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP107AU

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5742BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

400 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TIP101BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MJE5851BC

Onsemi

PNP

SINGLE

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

350 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

TIP102AF

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

SILICON

100 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJE5740AU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

200

150 Cel

SILICON

300 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BU508

Onsemi

NPN

SINGLE WITH BUILT-IN RESISTOR

NO

7 MHz

125 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2.25

150 Cel

SILICON

700 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-218AC

BU807/F1

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

150 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

BUILT IN BIAS RESISTOR

BD537

STMicroelectronics

NPN

SINGLE

NO

12 MHz

50 W

8 A

PLASTIC/EPOXY

SWITCHING

.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

50 W

15

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BU807FI

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

30 W

8 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

30 W

150 Cel

SILICON

150 V

1000 ns

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

SGS131

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

65 W

8 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

70 W

1000

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

BDX53BFI

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

30 W

8 A

PLASTIC/EPOXY

SWITCHING

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

30 W

750

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

BD537J

STMicroelectronics

NPN

SINGLE

NO

12 MHz

50 W

8 A

PLASTIC/EPOXY

SWITCHING

.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

50 W

15

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.