2 W Power Bipolar Junction Transistors (BJT) 526

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	No. of Terminals	Package Style (Meter)	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Maximum Collector-Base Capacitance	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
BCP53QTA	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	25	150 Cel	25 pF	SILICON	80 V	-65 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR		HIGH RELIABILITY		e3	30	260
FZT600B	Diodes Incorporated	NPN	DARLINGTON	YES	250 MHz	2 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	5000	150 Cel		SILICON	140 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT558	Diodes Incorporated	PNP	SINGLE	YES	50 MHz	2 W	.2 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	15	150 Cel		SILICON	400 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT655	Diodes Incorporated	NPN	SINGLE	YES	30 MHz	2 W	1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	20	150 Cel		SILICON	150 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT603	Diodes Incorporated	NPN	DARLINGTON	YES	150 MHz	2 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	2000	150 Cel		SILICON	80 V	-55 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX5516TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		100	150 Cel	25 pF	SILICON	60 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCP53TA	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	25	150 Cel	25 pF	SILICON	80 V	-65 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
BCX51TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
FZT690B	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	50	150 Cel		SILICON	45 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT789A	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	2 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	300	150 Cel		SILICON	25 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX5110TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		63	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCX5410TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		63	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCX5316QTC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	80 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260	AEC-Q101; IATF 16949
BCX52TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	60 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCX56TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	80 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCX5216TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		100	150 Cel	25 pF	SILICON	60 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
FZT696B	Diodes Incorporated	NPN	SINGLE	YES	70 MHz	2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	150	150 Cel		SILICON	180 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX55TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	60 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3		260
BCP5116TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	100	150 Cel	25 pF	SILICON	45 V	-65 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR		HIGH RELIABILITY		e3	30	260	AEC-Q101
FZT755	Diodes Incorporated	NPN	SINGLE	YES	30 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	20	150 Cel		SILICON	150 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3		260
FZT688B	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	4 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	12 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT491TA	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	60 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX5116TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		100	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR				e3	30	260
BCX53TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	80 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCX5216QTC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	60 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3		260	AEC-Q101; IATF 16949
FZT796A	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	200 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT605	Diodes Incorporated	NPN	DARLINGTON	YES	150 MHz	2 W	1.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	2000	150 Cel		SILICON	120 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	10	260
BCP5610QTC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	80 V	-65 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR		HIGH RELIABILITY		e3		260	AEC-Q101
FZT694B	Diodes Incorporated	NPN	SINGLE	YES	130 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	150	150 Cel		SILICON	120 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT692B	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	2 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	150	150 Cel		SILICON	70 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3		260
BCP5316TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	100	150 Cel	25 pF	SILICON	80 V	-65 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR		HIGH RELIABILITY		e3	30	260	AEC-Q101
BCX5310TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		63	150 Cel	25 pF	SILICON	80 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
BCX51TA	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	25	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260
FZT489	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	20	150 Cel		SILICON	30 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX54TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		25	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
FZT751-7	Diodes Incorporated	PNP	SINGLE	YES	140 MHz	2 W	3 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	40	150 Cel		SILICON	60 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3
BCP52TA	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	25	150 Cel	25 pF	SILICON	60 V	-65 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified	HIGH RELIABILITY		e3	30	260	AEC-Q101
FZT757	Diodes Incorporated	PNP	SINGLE	YES	30 MHz	2 W	.5 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	50	150 Cel		SILICON	300 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3		260
FZT549	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	2 W	1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	70	150 Cel		SILICON	30 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX5610TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		63	150 Cel	25 pF	SILICON	80 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3	30	260
FZT694BTA	Diodes Incorporated	NPN	SINGLE	YES	130 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	150	150 Cel		SILICON	120 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
FZT689B	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	3 A	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	150	150 Cel		SILICON	20 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
ZXTP5401GTC	Diodes Incorporated	PNP	SINGLE	YES	100 MHz	2 W	.6 A	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	50	150 Cel		SILICON	150 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified		TO-261AA	e3		260
BCX5510TC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		63	150 Cel	25 pF	SILICON	60 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3		COLLECTOR				e3		260
FZT491	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	100	150 Cel		SILICON	60 V		Matte Tin (Sn)	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3	30	260
BCX5416-13R	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE		100	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR				e3		260
FZT591	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY			GULL WING	RECTANGULAR	1	4	SMALL OUTLINE	Other Transistors	15	150 Cel		SILICON	60 V		MATTE TIN	DUAL	R-PDSO-G4	1	COLLECTOR	Not Qualified			e3		260
BCX5110TA	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	1 A	PLASTIC/EPOXY	SWITCHING	.5 V	FLAT	RECTANGULAR	1	3	SMALL OUTLINE	Other Transistors	63	150 Cel	25 pF	SILICON	45 V	-55 Cel	MATTE TIN	SINGLE	R-PSSO-F3	1	COLLECTOR	Not Qualified			e3	30	260

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.