50 MHz Power Bipolar Junction Transistors (BJT) 370

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

MPSW42G

Onsemi

NPN

SINGLE

NO

50 MHz

2.5 W

.5 A

PLASTIC/EPOXY

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

1 W

40

150 Cel

3 pF

SILICON

300 V

-55 Cel

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

KSE44H1

Onsemi

NPN

SINGLE

NO

50 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1.67 W

35

150 Cel

SILICON

30 V

SINGLE

R-PSFM-T3

TO-220AB

KSH44H11ITU

Onsemi

NPN

SINGLE

NO

50 MHz

20 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

40

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSIP-T3

Not Qualified

TO-251AA

e3

MPQ7051

Onsemi

NPN AND PNP

SEPARATE, 4 ELEMENTS

NO

50 MHz

.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

4

14

IN-LINE

25

SILICON

150 V

TIN LEAD

DUAL

R-PDIP-T14

Not Qualified

TO-116

e0

D45VH10BU

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45VH10

Onsemi

PNP

SINGLE

NO

50 MHz

83 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

20

150 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

30

235

KSE44H11TU

Onsemi

NPN

SINGLE

NO

50 MHz

1.67 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

KSE44H2

Onsemi

NPN

SINGLE

NO

50 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1.67 W

60

150 Cel

SILICON

30 V

SINGLE

R-PSFM-T3

TO-220AB

D45VH10BV

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45VH10AK

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45VH10AU

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

KSE44H8

Onsemi

NPN

SINGLE

NO

50 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1.67 W

60

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

TO-220AB

MPSW55G

Onsemi

PNP

SINGLE

NO

50 MHz

2.5 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

1 W

50

150 Cel

15 pF

SILICON

60 V

-55 Cel

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

NZT44H8

Onsemi

NPN

SINGLE

YES

50 MHz

1.5 W

8 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

D45VH10BG

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

KSE44H7

Onsemi

NPN

SINGLE

NO

50 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1.67 W

35

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

TO-220AB

KSE44H11

Onsemi

NPN

SINGLE

NO

50 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1.67 W

60

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

KSE44H4

Onsemi

NPN

SINGLE

NO

50 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1.67 W

35

150 Cel

SILICON

45 V

SINGLE

R-PSFM-T3

TO-220AB

D45VH

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

D45VH10BD

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45VH10BS

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MPSW55RLRAG

Onsemi

PNP

SINGLE

NO

50 MHz

2.5 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

THROUGH-HOLE

ROUND

1

3

CYLINDRICAL

Other Transistors

1 W

50

150 Cel

15 pF

SILICON

60 V

-55 Cel

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

D45VH10AJ

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44VH10BU

Onsemi

NPN

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H11AK

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44VH10AJ

Onsemi

NPN

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44VH10BA

Onsemi

NPN

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H11AU

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H8BG

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

D44H8AK

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H10BC

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H8AS

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BD787

Onsemi

NPN

SINGLE

NO

50 MHz

15 W

4 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-225

e0

235

MJE170G

Onsemi

PNP

SINGLE

NO

50 MHz

1.5 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

12

150 Cel

SILICON

40 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e3

D44H11BV

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BCP53T3

Onsemi

PNP

SINGLE

YES

50 MHz

1.5 W

1.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

80 V

TIN LEAD

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

TO-261AA

e0

D44VH10

Onsemi

NPN

SINGLE

NO

50 MHz

83 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

20

150 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

30

235

BCP53T3G

Onsemi

PNP

SINGLE

YES

50 MHz

1.5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

25

150 Cel

SILICON

80 V

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

TO-261AA

NOT SPECIFIED

NOT SPECIFIED

D44H8BS

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H10AF

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44VH10BG

Onsemi

NPN

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MJE170

Onsemi

PNP

SINGLE

NO

50 MHz

1.5 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

12

150 Cel

SILICON

40 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e0

235

MJE171

Onsemi

PNP

SINGLE

NO

50 MHz

1.5 W

3 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

12

150 Cel

SILICON

60 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e0

30

235

D44H10AS

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44VH10AF

Onsemi

NPN

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H11BS

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H8BC

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D44H8BA

Onsemi

NPN

SINGLE

NO

50 MHz

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

40

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.