.15 W Power Field Effect Transistors (FET) 148

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
SSM3K16FU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A			30	260
3SK291(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W		1	.03 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
3SK291(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W		1	.03 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
SSM3K35MFV(TPL3)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.18 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.18 A
BF900	Texas Instruments	N-CHANNEL	SINGLE	YES	.15 W		1	.05 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.05 A
BF905	Texas Instruments	N-CHANNEL	SINGLE	YES	.15 W		1	.04 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.04 A
6LN04S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.2 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.2 A
EC4406C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.2 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.2 A
3LN04SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.35 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.35 A
6LN04SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.2 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.2 A
6HN04SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.2 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.2 A
5LN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
6HN04S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.2 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.2 A
3LN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.15 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.15 A
3LN01M	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.15 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.15 A
5HN01SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
5HN01M	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
EC4408C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.2 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.2 A
3LN03SS-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.35 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	Tin/Bismuth (Sn/Bi)	.35 A	1	e6
5HN01S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
EC4405C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.3 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.3 A
EC4402C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
3LN01SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.15 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.15 A
3LN03M-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.35 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	Tin/Bismuth (Sn/Bi)	.35 A	1	e6
3LN04S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.35 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.35 A
EC4404C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.35 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.35 A
3HN04SS	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.3 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.3 A
EC4409C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.35 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.35 A
EC4403C	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
3HN04S	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.3 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.3 A
2SK3737-6	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.03 A
2SK2268	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
2SK1067-5	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
2SK3737-5	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.03 A
2SK1067-4	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
2SK1067-3	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
2SK1067	Onsemi	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel		.03 A
SSM5H06FE(TPL3,F)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	125 Cel		.1 A
SSM6N15AFE(TPL3,F)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
SSM6N42FE(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.8 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.8 A
SSM6N03FE(TE85L,F)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.1 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
SSM6N15FE(TPL3)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.1 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
3SK146	Toshiba	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.03 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		Tin/Lead (Sn/Pb)	.03 A		e0
SSM6N35FE(TPL3,F)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.18 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.18 A
SSM5H06FE(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.15 W	ENHANCEMENT MODE	1	.1 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	125 Cel		.1 A
SSM6N37FE(TE85L)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.25 A	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		.25 A
SSM6N16FE(TPL3)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.1 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A
SSM6N16FE(TPL3,F)	Toshiba	N-CHANNEL		YES	.15 W	ENHANCEMENT MODE		.1 A	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel		.1 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.