.6 W Power Field Effect Transistors (FET) 34

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
MCH6650	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.35 A
SCH2817	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.6 A
SCH2411	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
SCH2602	Onsemi	N-CHANNEL		YES	.6 W						ENHANCEMENT MODE			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
SCH2815	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.7 A
3HN04MH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
MCH6652	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE			.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
MCH5834	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				.7 A
SCH2410	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
SCH2821	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.6 A
SCH2816	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.6 A
MCH6656	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
6LN04MH-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		.2 A			1			e6
MCH6654	Onsemi	N-CHANNEL		YES	.6 W						DEPLETION MODE			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
SCH2409	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
SCH2812	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.4 A
SCH2808	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.4 A
3HN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.3 A
MPF9200	Onsemi	N-CHANNEL	SINGLE	NO	.6 W						ENHANCEMENT MODE	1		.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN LEAD		.4 A						e0	235
6HN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
3LN04MH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.35 A
1HN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.12 A
3LN04CH-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		.35 A			1			e6
6HN04MH-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Bismuth (Sn/Bi)		.2 A			1			e6
6LN04CH	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.2 A
SCH2806	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		1.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.2 A
MCH3435	Onsemi	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.7 A
IRHLUB7370Z4	Infineon Technologies	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.8 A
IRHLUBC7370Z4	Infineon Technologies	N-CHANNEL	SINGLE	YES	.6 W						ENHANCEMENT MODE	1		.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.8 A
SSM3J375F,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.15 ohm	2 A	DUAL	R-PDSO-G3						32 pF
SSM3J375F,LXHF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.15 ohm	2 A	DUAL	R-PDSO-G3						32 pF	AEC-Q101
SSM3J375F,LXHF(B	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.15 ohm	2 A	DUAL	R-PDSO-G3						32 pF	AEC-Q101
SSM3J375F,LXGF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.15 ohm	2 A	DUAL	R-PDSO-G3						32 pF	AEC-Q101
2SK446	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.6 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.4 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.