.9 W Power Field Effect Transistors (FET) 45

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	JESD-609 Code	Peak Reflow Temperature (C)
SI2302ADS	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.1 A
CPH5870	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.8 A
CPH5614	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
CPH5856	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
CPH3417	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				1.8 A
CPH5863	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2.5 A
CPH5611	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
CPH5826	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3 A
CPH3418	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.4 A
CPH5805	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3 A
CPH5612	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
CPH5839	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2 A
CPH5809	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3 A
CPH5831	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3 A
CPH3422	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
CPH3449	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
CPH5871	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						DEPLETION MODE	1		3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3.5 A
CPH5811	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3 A
CPH3425	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.5 A
CPH5855	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2.5 A
CPH5862	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				2 A
VEC2820	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel				3 A
MCH3415	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A
MCH3444	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
CPH6613	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
CPH6602	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
CPH6616	Onsemi	N-CHANNEL		YES	.9 W						ENHANCEMENT MODE			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
FDS6894AZ	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.9 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.017 ohm	8 A	DUAL	R-PDSO-G8	1	Not Qualified	e3	260
CPH6604	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
MCH3410	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
MCH3409	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
MCH3421-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		.8 A			1		e6
CPH6622	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
MCH3460	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
MCH3446	Onsemi	N-CHANNEL	SINGLE	YES	.9 W						ENHANCEMENT MODE	1		2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.5 A
2SK2962(TPE6)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
2SK2989(TPE6,Q)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
2SK2961(Q)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK2962(F)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
2SK2961(F)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK2962(Q)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1 A
2SK2989(TPE6,F)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
2SK2989(TPE6)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
2SK2961(TPE6)	Toshiba	N-CHANNEL	SINGLE	NO	.9 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
RJK4034DJE-00#Z0	Renesas Electronics	N-CHANNEL	SINGLE	NO	.9 W							1		1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.6 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.