1.39 W Power Field Effect Transistors (FET) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
TPIC5404DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20	ISOLATED	Not Qualified		MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5423LDW	Texas Instruments	N-CHANNEL	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	4 A	96 mJ	1.25 A	24	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.39 W	150 Cel	SILICON	125 ns		70 ns		.375 ohm	1.25 A	DUAL	R-PDSO-G24	ISOLATED	Not Qualified	ESD PROTECTED	MS-013AD		NOT SPECIFIED	NOT SPECIFIED	75 pF
TPIC5601DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	6	8 A	36 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20	ISOLATED	Not Qualified		MS-013AC		NOT SPECIFIED	NOT SPECIFIED	50 pF
TPIC5401DW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	10 A	21 mJ	1.7 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.389 W	150 Cel	SILICON	95 ns		130 ns		.35 ohm	1.7 A	DUAL	R-PDSO-G20		Not Qualified	ESD PROTECTED	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
MMDF3N04HD	Onsemi	N-CHANNEL		YES	1.39 W						ENHANCEMENT MODE				3.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.4 A
DMN2024UTS-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.39 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	45 A	8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G8					e3	30	260	38 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.