1.92 W Power Field Effect Transistors (FET) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
NTF2955T1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.4 A	225 mJ	2.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.185 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3	30	260
ZXMP6A17E6TA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.6 A		3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.125 ohm	2.3 A	DUAL	R-PDSO-G6	1		Not Qualified	LOW THRESHOLD, HIGH RELIABILITY		e3	30	260
NTF2955T1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.4 A	225 mJ	2.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.185 ohm	1.7 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e0		235
NTF2955T3	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10.4 A	225 mJ	2.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.185 ohm	1.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified		TO-261AA	e0
FDMC6890NZ	Onsemi	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.92 W	PLASTIC/EPOXY		20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	10 A		4 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Nickel/Palladium (Ni/Pd)	.15 ohm	4 A	DUAL	S-PDSO-N6	1		Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.