10 W Power Field Effect Transistors (FET) 69

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

2SK1838(S)-(3)

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

RJK0223DNS-00#J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK1211DNS-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

15 A

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.15 ohm

5 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK375L

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

RJK0222DNS-00#J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK03M9DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

2SK375S

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

2SK384S

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

ENHANCEMENT MODE

1

.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.3 A

2SK1838STL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

8 ohm

1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e6

RJK0389DPA-00-J53

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

20 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.0165 ohm

15 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

e4

RJK03M9DNS-00#J5

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

RJK1028DPA-00#J5A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

12 A

4 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

4 A

DUAL

R-PDSO-N5

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJK03F9DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

56 A

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0143 ohm

14 A

DUAL

S-PDSO-N8

DRAIN

Not Qualified

2SK1950(L)

Renesas Electronics

N-CHANNEL

SINGLE

NO

10 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

2SK384L

Renesas Electronics

N-CHANNEL

SINGLE

YES

10 W

ENHANCEMENT MODE

1

.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.3 A

RJK03E3DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0176 ohm

14 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

RJK0222DNS-00-J5

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

10 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

16 A

7

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0137 ohm

14 A

QUAD

R-XQFP-N7

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK1838S

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

8 ohm

1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK1270

Renesas Electronics

N-CHANNEL

SINGLE

NO

10 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

RJK03E3DNS-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0176 ohm

14 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

RJK1212DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

9 A

3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.34 ohm

3 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.