112 W Power Field Effect Transistors (FET) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
NVMFS4841NWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	112 W						ENHANCEMENT MODE	1			89 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				89 A
NVMFS4841NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	112 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	336 A	180 mJ	89 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	Tin (Sn)	.0114 ohm	16 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		e3	NOT SPECIFIED	NOT SPECIFIED	AEC-Q101
NVMFS5833NWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	112 W							1			86 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		TIN		86 A			1				e3	30	260
NVMFS5833NT3G	Onsemi	N-CHANNEL	SINGLE	YES	112 W							1			86 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		TIN		86 A			1				e3	30	260
MTP20N15E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	112 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	60 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.13 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e0		235
NVMFS4841NWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	112 W							1			89 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		TIN		89 A			1				e3	30	260
NVMFS4841NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	112 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	336 A	180 mJ	89 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.0114 ohm	16 A	DUAL	R-PDSO-F5		DRAIN	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
NVMFS5833NT1G	Onsemi	N-CHANNEL	SINGLE	YES	112 W							1			86 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		MATTE TIN		86 A			1				e3	30	260
NVMFS5833NWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	112 W							1			86 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel		TIN		86 A			1				e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.