113 W Power Field Effect Transistors (FET) 27

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SUD50P06-15-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	125 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.015 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SUD50P06-15-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	125 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	128 ns	-55 Cel	520 ns		.015 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA				405 pF
FDMS86255	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	541 mJ	45 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0124 ohm	10 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
PSMN059-150Y,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	129 A	255 mJ	43 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.059 ohm	43 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
IRF9383MTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0029 ohm	22 A	BOTTOM	R-XBCC-N3	1	DRAIN				e3	40	260
FDMS8350L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	800 mJ	200 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.00085 ohm	47 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
NVMJS2D5N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	565 mJ	164 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0033 ohm	164 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	28 pF	AEC-Q101
PSMN102-200Y,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A	202 mJ	21.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.102 ohm	21.5 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3	30	260
DMT10H4M5LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	240 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0043 ohm	100 A	DUAL	R-PDSO-F5		DRAIN				e3		260	25.5 pF
IXTT02N450HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	4500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A		.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	625 ohm	.2 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-268AA	e3	10	260
CSD16321Q5T	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	218 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0038 ohm	100 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	150 pF
FDMT800152DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	413 A	113 mJ	72 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	62 ns	-55 Cel	74 ns	Matte Tin (Sn) - annealed	.009 ohm	72 A	DUAL	S-PDSO-N3	1	DRAIN				e3	30	260	30 pF
NVTYS9D6P04M8LTWG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY		40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	290 A		76 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0096 ohm	76 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	47 pF	AEC-Q101
NTMJS2D5N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	565 mJ	164 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0033 ohm	164 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260
FDMS86150A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	726 mJ	80 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	51 ns	-55 Cel	57 ns	Matte Tin (Sn) - annealed	.00485 ohm	80 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260	45 pF
FDMS86257	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	541 mJ	45 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	51.8 ns	-55 Cel	58 ns	MATTE TIN	.0105 ohm	45 A	DUAL	R-PDSO-N5	1	DRAIN				e3	30	260	20 pF
PSMN102-200Y	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A	202 mJ	21.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.102 ohm	21.5 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
PSMN059-150YT/R	NXP Semiconductors	N-CHANNEL	SINGLE	YES	113 W						ENHANCEMENT MODE	1			43 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							43 A
PSMN102-200YT/R	NXP Semiconductors	N-CHANNEL	SINGLE	YES	113 W						ENHANCEMENT MODE	1			21.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							21.5 A
PSMN059-150Y	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	129 A	255 mJ	43 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.059 ohm	43 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
IRF9383MTR1PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		160 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0029 ohm	22 A	BOTTOM	R-XBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED
DMT3004LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0038 ohm	140 A	DUAL	R-PDSO-F8		DRAIN				e3		260	240 pF	MIL-STD-202
DMT31M7LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	215 mJ	100 A	5	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0024 ohm	100 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260	424 pF
DMJ70H600SH3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	113 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	67.5 mJ	11 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.6 ohm	11 A	SINGLE	R-PSIP-T3					TO-251	e3	30	260
DMP6018LPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	240 A	331 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.018 ohm	60 A	DUAL	R-PDSO-F8		DRAIN				e3		260	200 pF
DMT6004SCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	113 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	200 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.00365 ohm	100 A	SINGLE	R-PSFM-T3					TO-220AB	e3		260	105 pF	MIL-STD-202
IXTA02N450HV	Littelfuse	N-CHANNEL	SINGLE	YES	113 W							1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn)		.2 A			1					e3	10	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.