113.6 W Power Field Effect Transistors (FET) 10

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDMS4D5N08LC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

633 A

384 mJ

116 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

57 ns

-55 Cel

114 ns

.0042 ohm

116 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

40

260

65 pF

NTP125N02R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

15.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

95 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

235

NTP125N02RG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

125 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0062 ohm

95 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

260

NTB125N02RG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

125 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0062 ohm

95 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

260

NTB125N02RT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

125 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0062 ohm

95 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-220AB

e3

260

NTMFS4833NAT1G

Onsemi

N-CHANNEL

SINGLE

YES

113.6 W

ENHANCEMENT MODE

1

191 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

191 A

1

e3

30

260

NTB125N02R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

15.9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

95 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTB125N02RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

120 mJ

15.9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0062 ohm

95 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-220AB

e0

235

DMT30M9LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

460 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0016 ohm

100 A

DUAL

R-PDSO-F8

DRAIN

e3

260

128 pF

MIL-STD-202

DMT4001LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113.6 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

460 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0016 ohm

100 A

DUAL

R-PDSO-F5

3

DRAIN

e3

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.