1130 W Power Field Effect Transistors (FET) 6

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
IXFK78N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1500 mJ		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.068 ohm	78 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	5 pF
IXFK64N60P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	1500 mJ		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.1 ohm	64 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	4 pF
IXFX64N60P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	1500 mJ		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.1 ohm	64 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					4 pF
IXFX78N50P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	1500 mJ		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.068 ohm	78 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					5 pF
IXFK120N30P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	3000 mJ	120 A	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.027 ohm	120 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	20 pF
IXFX120N30P3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1130 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	3000 mJ	120 A	3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.027 ohm	120 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					20 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.