120 W Power Field Effect Transistors (FET) 268

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
NP36N055SLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	108 mJ	36 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.018 ohm	36 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA
NP80N03NDE-S18-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.011 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e3
NP80N055EHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
NP36N055IHE-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	108 mJ	36 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.014 ohm	36 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TAPE AND REEL	TO-252AA		NOT SPECIFIED	NOT SPECIFIED
NP80N04MHE-S18-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	169 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.008 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NP80N03KDE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
2SK410	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A			1						20	260
NP80N03CDE-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				80 A
NP80N03KLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
NP80N055DLE-S12-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.015 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED
NP80N055CLE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.015 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
NP80N03DLE-S12-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.011 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED
NP80N055DHE-S12-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.011 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED
NP80N04KHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	169 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.008 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
2SK774	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		18 A								e0
NP80N055KHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		10	260
NP80N03CLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.011 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
NP80N055NHE-S18-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.011 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e3
NP80N04KHE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	169 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.008 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
NP80N055KHE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
2SK799	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	40 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.5 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0
2SK623	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				20 A
NP80N055KLE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
NP80N04CHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	169 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.008 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
NP80N055KLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
NP80N055DLE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.015 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e0
NP80N03EDE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
NP80N055MHE-S18-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	MATTE TIN	.011 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
NP80N03CDE	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	TIN LEAD	.011 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
NP36N055SHE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	120 W							1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				36 A									NOT SPECIFIED	NOT SPECIFIED
NP80N04KHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	169 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.008 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		10	260
NP80N055ELE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.015 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
NP36N055SLE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	120 W							1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				36 A									NOT SPECIFIED	NOT SPECIFIED
NP36N055IHE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	120 W						ENHANCEMENT MODE	1			36 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				36 A
NP80N04DHE-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	169 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.008 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA		10	260
NP80N055EHE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	100 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
NP80N03ELE-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	400 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		.011 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
2SK317	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
2SK2174(S)	Renesas Electronics	N-CHANNEL	SINGLE	YES	120 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			.27 ohm	20 A	SINGLE	R-PSSO-G2			Not Qualified
2SK2486	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	144.1 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE
2SJ606-Z-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	160 mJ	83 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.023 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				10	260
2SK2367	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	161 mJ	15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.5 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified			e0
2SK2174(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	120 W	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR		1			20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			.27 ohm	20 A	SINGLE	R-PSIP-T3			Not Qualified
RJK0629JPE-00#J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	120 W							1			85 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				85 A
2SJ606	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	120 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	160 mJ	83 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.023 ohm	83 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SJ606-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	120 W							1			83 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A									NOT SPECIFIED	NOT SPECIFIED
2SJ606-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	160 mJ	83 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.023 ohm	83 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SJ606-Z-E2-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	120 W							1			83 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A									NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.