1250 W Power Field Effect Transistors (FET) 50

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
IXFB44N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	2000 mJ	44 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.22 ohm	44 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1			41 pF
IXFX300N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	700 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.004 ohm	300 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED	TO-247AD				3.2 pF
IXTK120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.023 ohm	120 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	8.9 pF
IXFX120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.024 ohm	120 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED	TO-247AD				5.5 pF
IXFX240N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.005 ohm	240 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					1.5 pF
IXTX120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.023 ohm	120 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					8.9 pF
IXFK44N80Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	3500 mJ	44 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.19 ohm	44 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	95 pF
IXFX520N075T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1350 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0022 ohm	520 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					530 pF
APTMC120AM09CT3AG	Microchip Technology	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR	NO	1250 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	590 A		295 A	32	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON CARBIDE	-40 Cel		.009 ohm	295 A	UPPER	R-XUFM-X32	ISOLATED					NOT SPECIFIED	NOT SPECIFIED
IXFK120N65X2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.024 ohm	120 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	5.5 pF
IXFK210N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	650 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0055 ohm	210 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA				7.7 pF
IXFK240N25X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.005 ohm	240 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA				1.5 pF
IXFK300N20X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	700 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.004 ohm	300 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA				3.2 pF
IXFK520N075T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1350 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0022 ohm	520 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	530 pF
IXFX32N100Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	2000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.32 ohm	32 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					67 pF
IXFX360N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0029 ohm	360 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					400 pF
IXTX600N04T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1600 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0015 ohm	600 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					1470 pF
IXFB30N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	75 A	2000 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin/Silver/Copper (Sn/Ag/Cu)	.35 ohm	30 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1	NOT SPECIFIED	NOT SPECIFIED
IXFK250N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	700 A	3000 mJ	250 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.0065 ohm	250 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFK32N100Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.32 ohm	32 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	67 pF
IXFK360N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0029 ohm	360 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	400 pF
IXFK52N100X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.125 ohm	52 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED	TO-264AA				123 pF
IXFK80N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	5000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.065 ohm	80 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	115 pF
IXFX240N15T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	2000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0052 ohm	240 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					270 pF
IXTX20N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	2500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		1 ohm	20 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					163 pF
IXTX550N055T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1375 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0016 ohm	550 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					1020 pF
IXFK64N60Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.095 ohm	64 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	90 pF
IXFX170N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	4000 mJ	170 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.014 ohm	170 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFK66N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.065 ohm	66 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA				142 pF
IXFX66N85X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	850 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	2500 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.065 ohm	66 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED	TO-247AD				142 pF
IXFX220N17T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	170 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	550 A	2000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0063 ohm	220 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					290 pF
IXFB170N30P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	5000 mJ	170 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.018 ohm	170 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTK20N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	2500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	1 ohm	20 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	163 pF
IXTK550N055T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1375 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0016 ohm	550 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	1020 pF
IXFX52N100X	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.125 ohm	52 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED	TO-247AD				123 pF
IXFK400N15X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A	3500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.003 ohm	400 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA				140 pF
IXFX210N30X3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	650 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0055 ohm	210 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					7.7 pF
IXFX64N60Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	250 A	3000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.095 ohm	64 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					90 pF
IXFX80N50Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	5000 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.065 ohm	80 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					115 pF
IXFB52N90P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	2000 mJ	52 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.16 ohm	52 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFK170N20P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	4000 mJ	170 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.014 ohm	170 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFX220N15P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ	220 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.009 ohm	220 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1
IXTK600N04T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1600 A	3000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0015 ohm	600 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	1470 pF
IXFK220N17T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	170 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	550 A	2000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0063 ohm	220 A	SINGLE	R-PSFM-T3	DRAIN		AVALANCHE RATED	TO-264AA	e1	10	260	290 pF
IXFX44N80Q3	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	3500 mJ	44 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.19 ohm	44 A	SINGLE	R-PSIP-T3	DRAIN		AVALANCHE RATED					95 pF
IXFK220N15P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	600 A	3000 mJ	220 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN SILVER COPPER	.009 ohm	220 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	AVALANCHE RATED	TO-264AA	e1	10	260
IXFB40N110P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	1100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	2000 mJ	40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.26 ohm	40 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1
IXFX250N10P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	700 A	3000 mJ	250 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin/Silver/Copper (Sn/Ag/Cu)	.0065 ohm	250 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	AVALANCHE RATED		e1	NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.