127 W Power Field Effect Transistors (FET) 19

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPP50R190CEXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

127 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63 A

339 mJ

18.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.19 ohm

18.5 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NVMFS5832NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

FDD86540

Onsemi

N-CHANNEL

SINGLE

YES

127 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

228 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0041 ohm

21.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

30

260

NVMFS5832NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

FQB33N10LTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

132 A

430 mJ

33 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.055 ohm

33 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FQB33N10TM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

132 A

435 mJ

33 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.052 ohm

33 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

NVMFS5832NLWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

127 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

120 A

1

e3

30

260

NVMFS5832NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

127 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

120 A

1

e3

30

260

FQP33N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

127 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

435 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.052 ohm

33 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTMFSC004N08MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

487 A

178 mJ

136 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.004 ohm

136 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

50 pF

NTMFSC004N08C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

487 A

152 mJ

136 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0075 ohm

136 A

DUAL

R-PDSO-F5

1

DRAIN

40

260

FDD86110

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

135 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0102 ohm

12.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

30

260

STL190N4F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

480 A

300 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.002 ohm

120 A

DUAL

R-PDSO-F8

DRAIN

BULK: 3000

NOT SPECIFIED

NOT SPECIFIED

70 pF

AEC-Q101

IPBE65R099CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

107 A

125 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.099 ohm

24 A

SINGLE

R-PSSO-G7

1

DRAIN

HIGH RELIABILITY

TO-263

e3

AEC-Q101

IPP65R099CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

127 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

107 A

125 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.099 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-220AB

e3

AEC-Q101

IPB65R090CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

107 A

125 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.09 ohm

25 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-263AB

e3

260

IPL65R130CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

72 A

85 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.13 ohm

21 A

SINGLE

S-PSSO-N4

DRAIN

e3

IPB65R099CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

107 A

125 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.099 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-263AB

e3

AEC-Q101

IPW50R190CEFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

127 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63 A

339 mJ

18.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

18.5 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.