135 W Power Field Effect Transistors (FET) 79

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRLR8743TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

250 mJ

160 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0031 ohm

160 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FDD3672

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 mJ

6.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

6.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

STP13NK60Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

400 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.55 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FDD10AN06A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

429 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRLU8743PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

640 A

250 mJ

160 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0031 ohm

160 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

e3

30

260

FDD2572-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

29 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.054 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

AEC-Q101

FDD2572_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

29 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.054 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

AEC-Q101

STB13NK60ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

400 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

13 A

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

e3

FQP11N40C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

360 mJ

10.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.53 ohm

10.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDD2572

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.054 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

FQB9N50CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

360 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

FDD10AN06A0-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

429 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0105 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD10AN06A0_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

429 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0105 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD10AN06A0_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

429 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0105 ohm

11 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

STB14NK50ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.38 ohm

14 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

e3

30

245

FDD3672_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 mJ

6.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

6.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

RF1S30P06SM9A

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN LEAD

.065 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

FDP65N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

430 mJ

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.016 ohm

65 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FDU2572

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

29 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

36 ns

-55 Cel

66 ns

.054 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251AA

FDB16AN08A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

117 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.016 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FDB2572

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.054 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FQB11N40CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

42 A

360 mJ

10.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.53 ohm

10.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

FAST SWITCHING

TO-263AB

e3

30

245

FDD16AN08A0-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

95 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.016 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

AEC-Q101

FDP2572

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.054 ohm

4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FDP3672

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

105 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 mJ

5.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.033 ohm

5.9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDP16AN08A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

117 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.016 ohm

9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDD16AN08A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

95 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.016 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

STU7NA60

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

7.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

7.6 A

e3

STP7NC70Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

238 mJ

6.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.38 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP7NB80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

400 mJ

6.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE

TO-220AB

e3

STP7NC80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

290 mJ

6.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STU5NA90

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

5 A

e3

STP7N80Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

6.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6.1 A

e3

STP7N80Z-1

STMicroelectronics

N-CHANNEL

SINGLE

NO

135 W

ENHANCEMENT MODE

1

6.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.1 A

STB8NC50-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

600 mJ

8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

8 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

STP10NC50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

550 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.52 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STB8NC70Z-T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

354 mJ

6.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

6.8 A

SINGLE

R-PSSO-G2

Not Qualified

STB14NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

14 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STB13NK60Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

400 mJ

13 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

13 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

STB7NC80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

26 A

290 mJ

6.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.5 ohm

6.5 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STP8NC70Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

354 mJ

6.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

6.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220

e0

STB8NC50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

600 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STB14NK50Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.38 ohm

14 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-262AA

e3

STB6NC90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

356 mJ

5.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.9 ohm

5.4 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STB8NC50T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

600 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STB6NC90ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

135 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

356 mJ

5.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.9 ohm

5.4 A

SINGLE

R-PSSO-G2

Not Qualified

e3

STP22NS25Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

350 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.15 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP14NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

135 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

400 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

14 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.