136 W Power Field Effect Transistors (FET) 130

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BUK9618-55A,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	246 A	127 mJ	61 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin (Sn)	.019 ohm	61 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK9518-55A,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	246 A	127 mJ	61 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.019 ohm	61 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BUK9618-55A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	246 A	127 mJ	61 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.019 ohm	61 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
IPI320N20N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	136 A	190 mJ	34 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.032 ohm	34 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
IPI80N04S3-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	290 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0042 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-262AA			260
IMBG120R090M1H	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A			7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	-55 Cel	TIN	.16 ohm	26 A	SINGLE	R-PSSO-G7	1	DRAIN			TO-263	e3			4.3 pF
BSPD30N06S2L-13	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					30 A
BSPD50N03S2L-06	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					50 A
BSPD50N06S2-14	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			48 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					48 A
BSPD50N03S2-07	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					50 A
BSPD30N06S2-15	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					30 A
BSPD30N08S2L-21	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					30 A
IPB320N20N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	136 A	190 mJ	34 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.032 ohm	34 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPS110N12N3GBKMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	120 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.011 ohm	75 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251	e3
BSPD30N08S2-22	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					30 A
IPI120P04P4-04	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ	120 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0038 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN			TO-262AA	e3
BSPD50N06S2L-13	Infineon Technologies	N-CHANNEL	SINGLE	YES	136 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					50 A
IPI120P04P4L-03	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ	120 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0052 ohm	120 A	SINGLE	R-PSIP-T3				LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IPI80N06S3L-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	250 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0059 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IPI80N03S4L-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	260 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0027 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-262AA	e3		260
IPS110N12N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	120 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.011 ohm	75 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251
SPD50N03S2-07G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	250 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0073 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
SP000691172	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	136 A	190 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.032 ohm	34 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				4 pF	IEC-61249-2-21
SPD50N03S2L-06G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	250 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0092 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252			260
SP000714312	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	136 A	190 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.032 ohm	34 A	SINGLE	R-PSIP-T3					TO-262AA				4 pF	IEC-61249-2-21
SP001063626	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0167 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				172 pF	AEC-Q101
SPD30N03S2L-07G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	250 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0098 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252			260
SP001061724	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	120 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0147 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				167 pF	AEC-Q101
SP000273284	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0022 ohm	90 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				200 pF	AEC-Q101
IPD30N08S2-22	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	240 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0215 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
IPB067N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	150 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0067 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPD50N06S2-14	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	240 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0144 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IRFS23N15DTRLP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A	260 mJ	23 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.09 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN
IPP120P04P4-04	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ	120 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0038 ohm	120 A	SINGLE	R-PSFM-T3	1	DRAIN			TO-220AB	e3
IPD110N12N3GBUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	120 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.011 ohm	75 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252
IPD50N06S3L-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	710 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.006 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-252	e3		260
IRFS23N15DPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A	260 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - with Nickel (Ni) barrier	.09 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
IPD50N06S3-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	710 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0069 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252			260
IPD90N04S3-04	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	260 mJ	90 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0036 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA LOW RESISTANCE	TO-252AA	e3		260
IPP120P04P4L-03	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ	120 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0052 ohm	120 A	SINGLE	R-PSFM-T3				LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IPD600N25N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	210 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.06 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3		260
IPD50N03S2L-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	250 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0092 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IPD30N03S2L-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	250 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0098 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IPP80N03S4L-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	260 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0027 ohm	80 A	SINGLE	R-PSFM-T3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-220AB	e3
IPP062NE7N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY		75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	160 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0062 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPP600N25N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	210 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.06 ohm	25 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPD90N03S4L02ATMA1/SAMPLE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	360 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0022 ohm	90 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				200 pF	AEC-Q101
IPB120P04P4-04	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ	120 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0035 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.