137 W Power Field Effect Transistors (FET) 19

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN1R0-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1450 A

259 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0014 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, ULTRA LOW RESISTANCE

MO-235

e3

30

260

IEC-60134

BUK768R3-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

IPB80P03P4L-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

80 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0067 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

130 pF

AEC-Q101

FDP75N08A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

137 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1738 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.011 ohm

75 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e3

NTMYS003N08LHTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1211 mJ

132 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0043 ohm

132 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

19 pF

NVMYS003N08LHTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1211 mJ

132 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0043 ohm

132 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

19 pF

AEC-Q101

PH1030CL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1030 A

259 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0014 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MO-235

e3

30

260

BUK765R3-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK965R4-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK969R0-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

137 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

IPI80P03P4-05

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

137 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

80 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.005 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

260

IPI80P03P4L-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

137 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

80 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.007 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

130 pF

AEC-Q101

IPP80P03P4-05

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

137 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

80 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.005 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

260

IPB80P03P4L04ATMA2

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0067 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

260

130 pF

AEC-Q101

IPB80P03P4-05

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

80 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0047 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

260

IPP80P03P4L-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

137 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

80 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.007 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

130 pF

AEC-Q101

IPD90P03P4-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

370 mJ

90 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0045 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

IPD90P03P4L-04

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

370 mJ

90 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0068 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e3

260

IPL60R105P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

137 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

100 A

105 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.105 ohm

SINGLE

S-PSSO-N4

2A

DRAIN

e3

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.