140 W Power Field Effect Transistors (FET) 239

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRF1010EZSPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

99 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.0085 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-263AB

e3

30

260

IRLU7833PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

530 mJ

140 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.0045 ohm

30 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

e3

30

260

IRLU3110ZTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

140 W

ENHANCEMENT MODE

1

63 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

63 A

IRLR3110ZTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

110 mJ

63 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.014 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

IRFR15N20DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

260 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.165 ohm

17 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

IRF1010ZLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

130 mJ

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.0075 ohm

75 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

TO-262AA

e3

30

260

AUIRF1010ZL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

130 mJ

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0075 ohm

94 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-262AA

e3

AUIRLU3114Z

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

260 mJ

42 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0065 ohm

42 A

SINGLE

R-PSIP-T3

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

TO-251AA

e3

IRF1010EZSTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

99 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.0085 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-263AB

e3

AUIRFU3607

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

310 A

120 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.009 ohm

56 A

SINGLE

R-PSIP-T3

1

DRAIN

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-251AA

e3

30

260

IRFR15N20DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

140 W

1

17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

17 A

1

e3

30

260

IRFS3607PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

310 A

120 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.009 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFU3710ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

150 mJ

56 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.018 ohm

42 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-251AA

e3

30

260

IRLR3114ZTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

500 A

260 mJ

130 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.0065 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

AUIRFS3607TRR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

310 A

120 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.009 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

TO-263AB

e3

IRFU4104PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

145 mJ

42 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.0055 ohm

42 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-251AA

e3

30

260

IRF1010EZSTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

99 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.0085 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-263AB

e3

IRFR4104PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

145 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0055 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

AUIRF1010EZL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

180 mJ

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0085 ohm

75 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IRFR4104TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

145 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0055 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-252AA

e3

30

260

IRFB4510PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

130 mJ

62 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0135 ohm

62 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

TK55D10J1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

382 mJ

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

55 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TK42E12N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

167 A

92 mJ

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0094 ohm

42 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK60D08J1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

498 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0093 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

2SK2370-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

285 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.4 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

HIGH VOLTAGE, AVALANCHE RATING

e6

10

260

2SK2369

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

285 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK1492-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

2500 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.12 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e6

10

260

2SK2487

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

264 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.6 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK2369-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

285 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.35 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

HIGH VOLTAGE, AVALANCHE RATING

e6

10

260

2SK2487-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

264 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

1.6 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e6

10

260

2SK2370

Renesas Electronics

N-CHANNEL

SINGLE

NO

140 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

20 A

e0

2SK1795

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

38 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.6 ohm

8 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

2SK1492

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

2500 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.1 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e0

SSW5N80A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

333 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SSP5N70

Samsung

N-CHANNEL

SINGLE

NO

140 W

PLASTIC/EPOXY

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSP5N80A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

333 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSP7N55

Samsung

N-CHANNEL

SINGLE

NO

140 W

PLASTIC/EPOXY

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSH6N70A

Samsung

N-CHANNEL

SINGLE

NO

140 W

PLASTIC/EPOXY

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.4 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

SSI5N80A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

333 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

5 A

SINGLE

R-PSIP-T3

Not Qualified

SSP5N80

Samsung

N-CHANNEL

SINGLE

NO

140 W

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSP5N90A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

529 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.9 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSH4N80AS

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

324 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

140 W

150 Cel

SILICON

125 ns

220 ns

3 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

42 pF

SSH4N90AS

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

536 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

140 W

150 Cel

SILICON

120 ns

215 ns

3.7 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

40 pF

SSP7N60

Samsung

N-CHANNEL

SINGLE

NO

140 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSP4N90

Samsung

N-CHANNEL

SINGLE

NO

140 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SSI5N90A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

529 mJ

5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.9 ohm

5 A

SINGLE

R-PSIP-T3

Not Qualified

SSW5N90A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

140 W

PLASTIC/EPOXY

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

529 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.9 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.