142 W Power Field Effect Transistors (FET) 17

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FQP16N25

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

560 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

AONS62614T

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

320 A

265 mJ

100 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0034 ohm

100 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

108 pF

NTP165N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

53 A

163 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.165 ohm

19 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NTP6N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

450 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

235

FQB7N60TM-WS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

29.6 A

580 mJ

7.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

7.4 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-262AB

30

245

NTP10N40

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

500 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

NTB10N40T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

500 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

NTB10N40

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

500 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

NTB6N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

450 mJ

6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

NTB6N60T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

450 mJ

6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

BUK7614-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

68 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

142 W

175 Cel

SILICON

111 ns

105 ns

MATTE TIN

.014 ohm

68 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

270 pF

BUK7514-60

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

68 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

142 W

175 Cel

SILICON

111 ns

105 ns

.014 ohm

68 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

270 pF

BUK7510-30

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0195 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTION

TO-220AB

BUK7614-55T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

142 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

68 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

142 W

175 Cel

SILICON

111 ns

105 ns

TIN

.014 ohm

68 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

270 pF

BUK7514-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

200 mJ

68 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

142 W

175 Cel

SILICON

111 ns

105 ns

.014 ohm

68 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTION

TO-220AB

270 pF

NP36N10SDE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

142 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

NP36N10SDE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

142 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.