1670 W Power Field Effect Transistors (FET) 8

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	No. of Terminals	Package Style (Meter)	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
IXFX230N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	630 A	5000 mJ	3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0075 ohm	230 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					60 pF
IXFK230N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	630 A	5000 mJ	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0075 ohm	230 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	60 pF
IXFX360N15T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.004 ohm	360 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					665 pF
IXFX420N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	5000 mJ	3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0026 ohm	420 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					530 pF
IXFK360N15T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	900 A		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.004 ohm	360 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	665 pF
IXFK420N10T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	5000 mJ	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0026 ohm	420 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	530 pF
IXFK320N17T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	170 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	800 A	5000 mJ	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0052 ohm	320 A	SINGLE	R-PSFM-T3	DRAIN	AVALANCHE RATED	TO-264AA	e1	10	260	410 pF
IXFX320N17T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1670 W	PLASTIC/EPOXY	SWITCHING	170 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	800 A	5000 mJ	3	IN-LINE	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0052 ohm	320 A	SINGLE	R-PSIP-T3	DRAIN	AVALANCHE RATED					410 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.