171 W Power Field Effect Transistors (FET) 18

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVMFS3D0P04M8LT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

752 mJ

183 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0027 ohm

28 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

IPP65R065C7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

171 mJ

33 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.065 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPZ65R065C7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

171 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.065 ohm

33 A

SINGLE

R-PSFM-T4

TO-247

e3

FQB8N90CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

850 mJ

6.3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.9 ohm

6.3 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

NTMT125N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

67 A

216 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.125 ohm

24 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

NTHL125N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

67 A

216 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.125 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

FQP8N90C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

850 mJ

6.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.9 ohm

6.3 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

NVMFWS3D0P04M8LT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

752 mJ

183 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0027 ohm

28 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMTS2D5N08H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

169 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0025 ohm

169 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

19 pF

AEC-Q101

BUK9C10-65BIT,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

171 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

75 A

1

e3

30

245

IPZ65R065C7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

171 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.065 ohm

33 A

SINGLE

R-PSFM-T4

TO-247

e3

IPBE65R075CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

139 A

164 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.075 ohm

32 A

SINGLE

R-PSSO-G7

1

DRAIN

HIGH RELIABILITY

TO-263

e3

AEC-Q101

IPL65R095CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

107 A

125 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.095 ohm

29 A

SINGLE

S-PSSO-N4

DRAIN

e3

IPP65R075CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

139 A

164 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.075 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-220AB

e3

AEC-Q101

IPW65R065C7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

171 mJ

33 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.065 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

IPB65R075CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

171 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

139 A

164 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.075 ohm

32 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-263AB

e3

AEC-Q101

IPP65R065C7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

145 A

171 mJ

33 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.065 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPW65R060CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

171 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

146 A

171 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.06 ohm

36 A

SINGLE

R-PSFM-T3

TO-247

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.