185 W Power Field Effect Transistors (FET) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Reference Standard
FDP10N60NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	185 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	550 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.75 ohm	10 A	SINGLE	R-PSFM-T3			Not Qualified	TO-220AB	e3
NVMFS2D3P04M8LT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	185 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A		220 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.003 ohm	32 A	DUAL	R-PDSO-F5	1	DRAIN			e3	30	260	AEC-Q101
NVMFWS2D3P04M8LT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	185 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A		220 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.003 ohm	32 A	DUAL	R-PDSO-F5	1	DRAIN			e3	30	260	AEC-Q101
NP82N06CLC	Renesas Electronics	N-CHANNEL	SINGLE	NO	185 W						ENHANCEMENT MODE	1			82 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					82 A
NP84N06DLD	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	185 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A		84 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0065 ohm	84 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	TO-262AA
NP84N06CLD	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	185 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A		84 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0065 ohm	84 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB
NP82N06ELC	Renesas Electronics	N-CHANNEL	SINGLE	YES	185 W						ENHANCEMENT MODE	1			82 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					82 A
NP82N06DLC	Renesas Electronics	N-CHANNEL	SINGLE	NO	185 W						ENHANCEMENT MODE	1			82 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					82 A
NP84N06ELD	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	185 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A		84 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0065 ohm	84 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	TO-263AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.