19.2 W Power Field Effect Transistors (FET) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SIA400EDJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	11.25 mJ	12 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.019 ohm	12 A	DUAL	S-PDSO-N6	DRAIN	Not Qualified				260
SIA430DJ-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A		12 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0135 ohm	12 A	DUAL	S-XDSO-N3	DRAIN	Not Qualified		e3		260
FCPF4300N80Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	19.2 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3.2 A	8.2 mJ	2.2 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	53 ns	-55 Cel	94 ns	Matte Tin (Sn) - annealed	4.3 ohm	2.2 A	SINGLE	R-PSFM-T3	ISOLATED		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
DMT6009LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	90 A	40.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	11 A	DUAL	S-PDSO-N8	DRAIN			e3		260	41 pF	MIL-STD-202
DMT6009LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	90 A	40.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	11 A	DUAL	S-PDSO-N8	DRAIN			e3		260	41 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.