20.8 W Power Field Effect Transistors (FET) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SI7216DN-T1-E3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

20.8 W

UNSPECIFIED

SWITCHING

40 V

C BEND

SQUARE

ENHANCEMENT MODE

2

20 A

5 mJ

6.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.032 ohm

6.5 A

DUAL

S-XDSO-C6

1

DRAIN

Not Qualified

e3

30

260

SI7216DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

20.8 W

UNSPECIFIED

SWITCHING

40 V

C BEND

SQUARE

ENHANCEMENT MODE

2

20 A

5 mJ

6.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.032 ohm

6.5 A

DUAL

S-XDSO-C6

1

DRAIN

Not Qualified

e3

30

260

SUD08P06-155L-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

7.2 mJ

8.2 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Pure Matte Tin (Sn) - annealed

.155 ohm

8.2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

30

260

NTD14N03RT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

FAST SWITCHING

e3

30

260

NTD14N03R-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.13 ohm

11.4 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

260

NTD14N03RG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTD14N03R-001

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

11.4 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e0

235

NTD14N03R-1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

11.4 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e0

NVD14N03RT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

14 A

1

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

FAST SWITCHING

e3

AEC-Q101

NTD14N03RT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

NTD14N03R

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

11.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e0

235

SVD14N03RT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20.8 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

14 A

1

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.13 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

FAST SWITCHING

e3

30

260

AEC-Q101

IPAN70R750P7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20.8 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.75 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.