215 W Power Field Effect Transistors (FET) 18

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN1R2-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

215 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

RFG60P06E

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.03 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

MEGAFET

TO-247

e0

FDP19N40

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

542 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.24 ohm

19 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTP5426N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

735 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

120 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NTB5426NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

215 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

260 A

735 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.006 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

STB85NS04ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

215 W

PLASTIC/EPOXY

SWITCHING

33 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

550 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.015 ohm

80 A

SINGLE

R-PSSO-G2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STB85NS04Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

SWITCHING

33 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

550 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.015 ohm

80 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

PSMN1R1-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

NO

215 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

IPI80N06S2-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

260

SPB80N06S2-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

215 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.008 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e0

SPI80N06S2-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.008 ohm

80 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-262AA

SPP80N06S2-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.008 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SP001067888

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.008 ohm

80 A

SINGLE

R-PSFM-T3

TO-220AB

190 pF

AEC-Q101

SP001067884

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

215 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0077 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

190 pF

AEC-Q101

SP001067886

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.008 ohm

80 A

SINGLE

R-PSIP-T3

TO-262AA

190 pF

AEC-Q101

IPP80N06S2-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

260

IPB80N06S2-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

215 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0077 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IXTF6N200P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

215 W

PLASTIC/EPOXY

SWITCHING

2000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

4.2 ohm

4 A

SINGLE

R-PSIP-T3

ISOLATED

104 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.