238 W Power Field Effect Transistors (FET) 15

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN013-100YSEX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

BUK7Y12-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

85 A

1

e3

30

260

BUK9Y4R8-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

593 A

199 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0048 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

AEC-Q101; IEC-60134

BUK7Y7R8-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK7Y4R8-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK9Y12-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

85 A

1

e3

30

260

BUK9Y8R5-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN6R9-100YSFX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

321 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0102 ohm

90 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

19 pF

IEC-60134

PSMN1R5-40YSDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1145 A

426 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0015 ohm

202 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, AVALANCHE RATED

MO-235

e3

30

260

513 pF

IEC-60134

NVBGS6D5N15MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1800 A

180 mJ

121 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.007 ohm

121 A

SINGLE

R-PSSO-G6

DRAIN

TO-263CB

NOT SPECIFIED

NOT SPECIFIED

10.3 pF

AEC-Q101

NTBGS6D5N15MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1800 A

180 mJ

121 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.007 ohm

121 A

SINGLE

R-PSSO-G6

DRAIN

TO-263CB

NOT SPECIFIED

NOT SPECIFIED

10.3 pF

NTBGS2D5N06C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

224 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0025 ohm

224 A

SINGLE

R-PSSO-G6

1

DRAIN

TO-263CB

e3

30

245

22 pF

PSMN5R5-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

554 A

232 mJ

120 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0055 ohm

120 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

MO-235

17 pF

IEC-60134

PSMN6R9-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

321 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0102 ohm

90 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

19 pF

IEC-60134

PSMN1R5-40YSD

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

238 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1145 A

426 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0015 ohm

202 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, AVALANCHE RATED

MO-235

e3

30

260

513 pF

IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.