27 W Power Field Effect Transistors (FET) 46

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDMC8296

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

72 mJ

44 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.008 ohm

12 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

ULTRA-LOW RESISTANCE

e4

30

260

FDPF3N50NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

113 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.5 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FDMS7692

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

21 mJ

47 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0075 ohm

14 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

30

260

AOD609G

Alpha & Omega Semiconductor

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

12 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

175 Cel

SILICON

-55 Cel

.03 ohm

12 A

SINGLE

R-PSSO-G4

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

40 pF

AOD609

Alpha & Omega Semiconductor

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

12 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

175 Cel

SILICON

-55 Cel

.03 ohm

12 A

SINGLE

R-PSSO-G4

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

43 pF

IRLIZ14GPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

68 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.2 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

FDMS7692A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

50 A

21 mJ

45 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.008 ohm

13.5 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

TJ8S06M3L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

19 mJ

8 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.13 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

60 pF

AEC-Q101

TJ8S06M3L(T6L1,NQ)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

19 mJ

8 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FDMS7694

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

50 A

21 mJ

47 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0095 ohm

13.2 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

NDF03N60ZG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

100 mJ

3.1 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.6 ohm

3.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NDF03N60ZH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

100 mJ

3.1 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.6 ohm

3.1 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FDMS0349

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

50 A

21 mJ

47 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

27 ns

-55 Cel

43 ns

Tin (Sn)

.008 ohm

20 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

55 pF

NVMFD5852NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

329 A

80 mJ

44 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

15 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

FQPF3N25

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9.2 A

40 mJ

2.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.2 ohm

2.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

FCPF360N65S3R0L-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

40 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.36 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FDMD8900

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

280 A

73 mJ

66 A

12

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

27 ns

-55 Cel

50 ns

MATTE TIN

.004 ohm

66 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

75 pF

FCPF360N65S3R0L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

40 mJ

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.36 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FDMS7580

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

60 A

32 mJ

49 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0075 ohm

15 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

NVMFD5852NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

329 A

80 mJ

44 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

15 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

STU1HN60K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

60 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

8 ohm

.76 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

2 pF

STD1HN60K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

8 ohm

.76 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

2 pF

STU3N45K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

7.2 A

1.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.8 ohm

1.8 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

PHX23NQ10T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

93 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.07 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

TO-220AB

e3

PHX23NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

93 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.07 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FAST SWITCHING

TO-220AB

e3

IPAN60R800CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15.7 A

72 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.8 ohm

8.4 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IRFH8337TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

65 A

28 mJ

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0128 ohm

12 A

DUAL

R-PDSO-F5

1

DRAIN

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

e3

BSC0909NS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

176 A

10 mJ

44 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0091 ohm

12 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

IRFH4234TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

27 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

1

IPA60R750E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15.7 A

72 mJ

5.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.75 ohm

5.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IRFHM831TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

96 A

50 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0126 ohm

14 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

IPA95R1K2P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

11 mJ

6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IRFH8337TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

65 A

28 mJ

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0128 ohm

12 A

DUAL

R-PDSO-F5

1

DRAIN

HIGH RELIABILITY

e3

40

260

IPA95R1K2P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

11 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA60R145CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

58 A

68 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.145 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

HIGH RELIABILITY

TO-220AB

e3

10

260

IPA80R750P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

16 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.75 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

TPN3300ANH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

TPN3300ANH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

TPCC8009(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

TK20P04M1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

10.4 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.034 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TJ8S06M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

19 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.13 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

60 pF

AEC-Q101

TJ10S04M3L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

23 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.062 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

90 pF

AEC-Q101

TPN30008NH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

TPN30008NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

TPCC8009(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

27 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

TJ10S04M3L,LXHQ

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

23 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.062 ohm

10 A

SINGLE

R-PSSO-G2

DRAIN

90 pF

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.