275 W Power Field Effect Transistors (FET) 4

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NVHL055N60S5F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	275 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	159 A	417 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.055 ohm	45 A	SINGLE	R-PSFM-T3		DRAIN			TO-247					AEC-Q101
PSMN1R0-30YLE	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	275 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1303 A	1500 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.00155 ohm	275 A	SINGLE	R-PSSO-G4	1	DRAIN		HIGH RELIABILITY	MO-235	e3	30	260	732 pF	IEC-60134
FS40SM-6	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	275 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.114 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified
FS40SM-5	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	275 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.086 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.