28 W Power Field Effect Transistors (FET) 147

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVTFS4C10NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

196 A

26 mJ

47 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0074 ohm

15.3 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVTFS4C10NWFTAG

Onsemi

N-CHANNEL

SINGLE

YES

28 W

1

47 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

47 A

1

e3

30

260

FQD13N06LTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

90 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.145 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

CSD17308Q3

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

78 A

65 mJ

44 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0165 ohm

47 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

35 pF

FQD1N60CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

33 mJ

1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

11.5 ohm

1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

FDPF5N50UT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

216 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQU13N06LTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

90 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.145 ohm

11 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

e3

FDPF4N60NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15 A

223.8 mJ

3.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.5 ohm

3.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

AONR21307

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

82 A

54 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.011 ohm

24 A

DUAL

S-PDSO-F8

DRAIN

e3

260 pF

FQD7P06TM

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21.6 A

90 mJ

5.4 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.451 ohm

5.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

NTMFS5C682NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

43 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0315 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

7 pF

FQU13N06LTU_WS

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

90 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.145 ohm

11 A

SINGLE

R-PSIP-T3

TO-251AA

e3

FQU13N06LTU-WS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

90 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.145 ohm

11 A

SINGLE

R-PSIP-T3

TO-251AA

e3

NVMFS5C682NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

43 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0315 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

SSR1N60BTM-WS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

50 mJ

.9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

140 ns

-55 Cel

140 ns

MATTE TIN

12 ohm

.9 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

4.7 pF

FQU13N06L

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

90 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.145 ohm

11 A

SINGLE

R-PSIP-T3

Not Qualified

FAST SWITCHING, AVALANCHE RATED

TO-251

e0

IRFHM8334TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

176 A

35 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.009 ohm

13 A

DUAL

S-PDSO-N8

1

DRAIN

IPA95R750P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

18 mJ

9 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.75 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPAW70R600CEXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

55 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.6 ohm

10.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NVMFS5C468NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

190 A

95 mJ

37 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0176 ohm

37 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

11 pF

AEC-Q101

AUIRLR014N

Infineon Technologies

N-CHANNEL

SINGLE

YES

28 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

1

AUIRLR014NTR

International Rectifier

N-CHANNEL

SINGLE

YES

28 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

NVMFS5C682NLAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

43 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0315 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5C468NLWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

190 A

95 mJ

37 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0176 ohm

37 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

11 pF

AEC-Q101

NTMFS5C468NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

190 A

95 mJ

37 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0176 ohm

37 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

SISA12ADN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

30 V

C BEND

SQUARE

ENHANCEMENT MODE

1

80 A

11 mJ

25 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0043 ohm

25 A

DUAL

S-PDSO-C5

DRAIN

NTPF600N80S3Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

24 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.6 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FQU1N60CTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

33 mJ

1 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.4 ohm

1 A

SINGLE

R-PSIP-T3

TO-251AA

e3

NDF60N550U1G

Onsemi

N-CHANNEL

SINGLE

NO

28 W

1

9.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9.5 A

NOT SPECIFIED

NOT SPECIFIED

2SK4197FG

Onsemi

N-CHANNEL

SINGLE

NO

28 W

ENHANCEMENT MODE

1

3.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.3 A

NTMYS011N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

173 A

75 mJ

35 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.012 ohm

13 A

SINGLE

R-PSSO-G4

1

e3

30

260

SSU1N60BTU-WS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

50 mJ

.9 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

140 ns

-55 Cel

140 ns

Matte Tin (Sn) - annealed

12 ohm

.9 A

SINGLE

R-PSIP-T3

DRAIN

TO-251AA

e3

4.7 pF

NTMYS021N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

131 A

43 mJ

27 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0315 ohm

9.8 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

2SK4197FS

Onsemi

N-CHANNEL

SINGLE

NO

28 W

1

3.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

3.3 A

e3

NTMYS010N04CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

187 A

62 mJ

38 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0176 ohm

14 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

2SK4195LS

Onsemi

N-CHANNEL

SINGLE

NO

28 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

4 A

e2

NVMFS024N06CT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

158 A

14 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.022 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

5.05 pF

AEC-Q101

FDD6630A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

55 mJ

21 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.035 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

2SK2620LS

Onsemi

N-CHANNEL

SINGLE

NO

28 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

FDPF5N50T

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

225 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NVMYS021N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

131 A

43 mJ

27 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0315 ohm

9.8 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101

NVMFWD024N06CT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

85 A

14 mJ

24 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0226 ohm

24 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

5.05 pF

AEC-Q101

NVMFD024N06CT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

85 A

14 mJ

24 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0226 ohm

24 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

5.05 pF

AEC-Q101

FQPF2N70

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

140 mJ

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6.3 ohm

2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NVMFS5C468NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

151 A

75 mJ

35 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.012 ohm

35 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

11 pF

AEC-Q101

FCPF600N60ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22.2 A

135 mJ

7.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

60 ns

-55 Cel

116 ns

MATTE TIN

.6 ohm

7.4 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

45 pF

NVTFWS024N06CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

112 A

14 mJ

24 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0226 ohm

24 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

5.05 pF

AEC-Q101

NVMFS5C682NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

43 mJ

25 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0315 ohm

25 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.