28.8 W Power Field Effect Transistors (FET) 11

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTD3055-150T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	MATTE TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e3	30	260	40 pF
NVD3055-150T4G-VF01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	Matte Tin (Sn) - annealed	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260	40 pF	AEC-Q101
NID9N05CLG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED	e3		260
NID9N05CLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED	e3		260
NID9N05CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED	e0		235
NVD3055-150T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	MATTE TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260	40 pF	AEC-Q101
NID9N05CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	52 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A	160 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.181 ohm	9 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	ESD PROTECTED	e0	30	235
NTD3055-150T4H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			e3	30	260	40 pF
NTD3055-150-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	TIN	.15 ohm	9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		e3		260	40 pF
NTD3055-150G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	28.8 W	175 Cel	SILICON	105 ns	-55 Cel	75 ns	TIN	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e3		260	40 pF
NTMFS23D9N06HLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	28.8 W	PLASTIC/EPOXY	AMPLIFIER	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	65 mJ	23 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0353 ohm	23 A	DUAL	R-PDSO-F5	1	DRAIN			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.