3.3 W Power Field Effect Transistors (FET) 19

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
STN1HNK60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.6 A	25 mJ	.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	8.5 ohm	.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
STN1NK60ZL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	150 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3.3 W	150 Cel	SILICON	-55 Cel	MATTE TIN	15 ohm	.44 A	DUAL	R-PDSO-G4	1	DRAIN				e3		260	2 pF
STN4NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	200 mJ	4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.12 ohm	4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
NTLJS4114NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	28 A		7.8 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.045 ohm	3.6 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
SI4850EY-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	3.3 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			Tin/Lead (Sn/Pb)		6 A								e0
DMPH4015SK3Q-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	260 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260	526 pF	AEC-Q101
STN3N40K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	45 mJ	3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	3.3 ohm	3 A	DUAL	R-PDSO-G3	1	DRAIN	Not Qualified			e3	30	260
SI4850EY-E3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	3.3 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			Matte Tin (Sn)		6 A			1					e3
DMPH4013SPSQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	277 A	260 mJ	69 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.013 ohm	69 A	DUAL	R-PDSO-G5	1	DRAIN				e3		260	403 pF	AEC-Q101
EFC2K103NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	3.3 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	DEPLETION MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					BOTTOM	R-XBCC-N10		SOURCE					NOT SPECIFIED	NOT SPECIFIED
NTLTS3107PR2G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	25 A		8.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.016 ohm	5.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260
FSS804	Onsemi	N-CHANNEL	SINGLE	YES	3.3 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					14 A
STN7NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.065 ohm	5 A	DUAL	R-PDSO-G3		DRAIN	Not Qualified			e3
BUK9MLL-55PLL,518	NXP Semiconductors	N-CHANNEL		YES	3.3 W						ENHANCEMENT MODE				5.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5.9 A			3						30	260
DMPH4015SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	260 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	14 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260	526 pF
DMNH6009SPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	380 A	226 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.0073 ohm	95 A	DUAL	R-PDSO-F8		DRAIN				e3		260	111 pF	MIL-STD-202
DMPH4013SPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	277 A	260 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.013 ohm	69 A	DUAL	R-PDSO-F8		DRAIN				e3		260	403 pF	MIL-STD-202
DMN11M2UCA14-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.3 W	UNSPECIFIED	SWITCHING	12 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	80 A			14	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	NICKEL GOLD	.0034 ohm	25.5 A	BOTTOM	R-XBCC-N14						e4		260	304 pF	MIL-STD-202
TPCA8089	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	15 A	31 mJ	5 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.091 ohm	5 A	DUAL	S-PDSO-F5		DRAIN

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.