3.5 W Power Field Effect Transistors (FET) 55

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMP4015SK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		35 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.015 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260
SI7465DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	25 A	24.2 mJ	3.2 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.064 ohm	3.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7949DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	25 A	24.2 mJ	3.2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		PURE MATTE TIN	.064 ohm	3.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified
SI7465DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	25 A	24.2 mJ	3.2 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.064 ohm	3.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7942DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	20 A	20 mJ	3.8 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		PURE MATTE TIN	.049 ohm	3.8 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified				30	260
SI7942DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	20 A	20 mJ	3.8 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Pure Matte Tin (Sn) - annealed	.049 ohm	3.8 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified				30	260
SI7540DP-T1-E3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED	SWITCHING	12 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.017 ohm	7.6 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
DMP4015SK3Q-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		35 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.015 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260
SI7949DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	25 A	24.2 mJ	3.2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.064 ohm	3.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
SI7960DP-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	UNSPECIFIED		60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	40 A	27 mJ	6.2 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.021 ohm	6.2 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
SI3438DV-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		7.4 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.0355 ohm	7.4 A	DUAL	R-PDSO-G6	1		Not Qualified		MO-193AA	e3	30	260
FP501	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						.5 A
2SK3944	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
2SK3489	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8 A
2SK3614	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					4 A
2SK3980	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.9 A
2SK3485	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2.5 A
2SK3490	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8 A
2SK3486	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8 A
2SK3487	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8 A
2SK3488	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2.5 A
2SK2748	Onsemi	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
PMPB40SNA,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			12.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN		12.9 A			1					e3	30	260
PMWD22XN	NXP Semiconductors	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	37 A		9.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.024 ohm	9.2 A	DUAL	R-PDSO-G8			Not Qualified		MO-153AA		NOT SPECIFIED	NOT SPECIFIED
PSMN085-150K,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1						FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD					2					e4	30	260
PSMN085-150K	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.085 ohm	3.5 A	DUAL	R-PDSO-G8	2		Not Qualified		MS-012AA	e4	30	260
PSMN085-150K,518	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.085 ohm	3.5 A	DUAL	R-PDSO-G8	2		Not Qualified		MS-012AA	e4	30	260
PSMN038-100K,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			6.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		6.3 A			2					e4	30	260
PSMN005-30K,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD		20 A			2					e4	30	260
PSMN165-200K,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	3.5 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			NICKEL PALLADIUM GOLD					2					e4	30	260
DMTH8028LFVWQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	108 A	23.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	27 A	DUAL	S-PDSO-F8		DRAIN				e3		260	19.5 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMTH8028LFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	108 A	23.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	27 A	DUAL	S-PDSO-F8		DRAIN				e3		260	19.5 pF
DMTH8028LFVWQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	108 A	23.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	27 A	DUAL	S-PDSO-F8		DRAIN				e3		260	19.5 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMTH8028LFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	108 A	23.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	27 A	DUAL	S-PDSO-F8		DRAIN				e3		260	19.5 pF
UPA1556AH	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	20 A		5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.33 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified			e0
UPA1552H	Renesas Electronics	N-CHANNEL	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	20 A		5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.35 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified			e0
UPA1570H	Renesas Electronics	N-CHANNEL		NO	3.5 W						ENHANCEMENT MODE				2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
UPA1572H	Renesas Electronics	N-CHANNEL	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A		2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.8 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified			e0
UPA1550H-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.15 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified			e6	10	260
UPA1526H-AZ	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	8 A		2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.4 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified				10	260
UPA1576H-AZ	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A		2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.5 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified				10	260
UPA1556AH-AZ	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	20 A		5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.33 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified				10	260
UPA1527H	Renesas Electronics	P-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	8 A		2 A	10	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified			e0
4AK19	Renesas Electronics	N-CHANNEL		NO	3.5 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5 A
UPA1522H	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	8 A		2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.25 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified			e0
UPA1524H-AZ	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A		2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified				10	260
UPA1576H	Renesas Electronics	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A		2 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1.5 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified			e0
UPA1527H-AZ	Renesas Electronics	P-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	3.5 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	8 A		2 A	10	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1 ohm	2 A	SINGLE	R-PSIP-T10			Not Qualified				10	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.