325 W Power Field Effect Transistors (FET) 14

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
HUF75345S3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	325 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.007 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
HUF75345G3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	325 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.007 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e3	NOT SPECIFIED	NOT SPECIFIED
NTHL045N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	325 W	PLASTIC/EPOXY		650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	304 A		64.2 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	-55 Cel	Matte Tin (Sn) - annealed		64.2 A	SINGLE	R-PSFM-T3					TO-247	e3			14.53 pF
NTC050N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	325 W	UNSPECIFIED		650 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	373 A		61.5 A	3	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	-55 Cel			61.5 A	UNSPECIFIED	R-XXUC-N3									14.43 pF
NVHL045N065SC1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	325 W	PLASTIC/EPOXY		650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	304 A		64.2 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE	-55 Cel	Matte Tin (Sn) - annealed		64.2 A	SINGLE	R-PSFM-T3					TO-247	e3			14.53 pF
HUF75345P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	325 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.007 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
PM5075J	Renesas Electronics			NO	325 W	UNSPECIFIED			UNSPECIFIED	RECTANGULAR		1			75 A	8	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.12 ohm	75 A	UPPER	R-XUFM-X8			Not Qualified
PM4575N	Renesas Electronics				325 W							1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					75 A
PM4575J	Renesas Electronics			NO	325 W	PLASTIC/EPOXY			UNSPECIFIED	RECTANGULAR		1			75 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.12 ohm	75 A	UPPER	R-PUFM-X7			Not Qualified
IXFN15N100	Littelfuse	N-CHANNEL	SINGLE	NO	325 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						15 A
IXFN35N50	Littelfuse	N-CHANNEL	SINGLE	NO	325 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						35 A
IXTP80N12T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	325 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	400 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.017 ohm	80 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				66 pF
IXTA80N12T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	325 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	400 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.017 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	66 pF
IXFN17N80	Littelfuse	N-CHANNEL	SINGLE	NO	325 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						17 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.