33 W Power Field Effect Transistors (FET) 103

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SUD40N10-25-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.025 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA		30	260
NTTFS5820NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	149 A	48 mJ	37 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0115 ohm	11 A	DUAL	S-PDSO-F5	1	DRAIN	Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
SPA11N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	340 mJ	5.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.38 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IRFHM9391TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	90 A	75 mJ	38 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0225 ohm	11 A	DUAL	S-PDSO-N8	1	DRAIN
STD5N20LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.7 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SIS407DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	UNSPECIFIED	SWITCHING	20 V	C BEND	SQUARE	ENHANCEMENT MODE	1	40 A	20 mJ	25 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0102 ohm	25 A	DUAL	S-XDSO-C5		DRAIN	Not Qualified				40	260
FQPF5N60CYDTU	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	33 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.5 A
IXTY02N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.6 A	40 mJ	.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.075 ohm	.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	10	260
FDMD8440L	Onsemi	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	521 A	265 mJ	87 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	68 ns		.0026 ohm	87 A	DUAL	R-PDSO-N8		SOURCE					NOT SPECIFIED	NOT SPECIFIED	70 pF
FDPF7N60NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	275 mJ	6.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.25 ohm	6.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
SPA11N60C3E8185	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	340 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.38 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
SPA11N65C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	340 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.38 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
SI7615CDN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ	35 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	66 ns	-55 Cel	122 ns	PURE MATTE TIN	.009 ohm	35 A	DUAL	S-PDSO-F5	1	DRAIN					30	260	390 pF
PSMN020-30MLCX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	33 W						ENHANCEMENT MODE	1			31.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							31.8 A
FCPF380N65FL1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30.6 A	.33 mJ	10.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	33 W	150 Cel	SILICON	71.6 ns	-55 Cel	126 ns	MATTE TIN	.38 ohm	10.2 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE ENERGY RATED	TO-220AB	e3			1 pF
FCPF380N65FL1-F154	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30.6 A	.33 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	33 W	150 Cel	SILICON	71.6 ns	-55 Cel	126 ns	Matte Tin (Sn) - annealed	.38 ohm	10.2 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE ENERGY RATED	TO-220AB	e3			1 pF
FDPF190N15A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	261 mJ	27.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.019 ohm	27.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
IRFI530NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	150 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.11 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IXTP02N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	.6 A	40 mJ	.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Silver/Copper (Sn/Ag/Cu)	.075 ohm	.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e1	NOT SPECIFIED	NOT SPECIFIED
IRF510A	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	63 mJ	5.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.4 ohm	5.6 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
SUD40N10-25	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.025 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e0
IAUZ30N06S5L140ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	85 A	27 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0196 ohm	30 A	DUAL	S-PDSO-N8	1	DRAIN				e3			15 pF	AEC-Q101
NVD5807NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	29.4 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.031 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
FDMD86100	Onsemi	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	299 A	337 mJ	39 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	33 ns	-55 Cel	42 ns	Matte Tin (Sn) - annealed	.0105 ohm	39 A	DUAL	R-PDSO-N8	1	SOURCE			MO-240AA	e3	30	260	20 pF
IXTY12N06T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	20 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.085 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-252AA	e3	10	260	10.4 pF
NVTYS003N03CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		30 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	174 A	84 mJ	12 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0051 ohm	12 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	71 pF	AEC-Q101
2SK4096LS-1E	Onsemi	N-CHANNEL	SINGLE	NO	33 W							1			7.1 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		7.1 A								e3
NTPF165N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	53 A	163 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.165 ohm	19 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
2SK4100LS	Onsemi	N-CHANNEL	SINGLE	NO	33 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)		6 A
NVTYS029N08HTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		80 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	81 A	27.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0324 ohm	21 A	DUAL	R-PDSO-X8	1	DRAIN				e3	30	260	4 pF	AEC-Q101
AO01	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	76 mJ	14 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.19 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK4098FG	Onsemi	N-CHANNEL	SINGLE	NO	33 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
NTMYS029N08LHTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	97 A	68 mJ	22 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.038 ohm	22 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	4 pF
NTD5807NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	29.4 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.031 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTMFS4C054NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	115 mJ	80 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.00356 ohm	12.4 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	46 pF
FDMS7578	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	40 mJ	63 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0058 ohm	17 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
FDPF7N60NZT	Onsemi	N-CHANNEL	SINGLE	NO	33 W							1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		6.5 A								e3
FCPF190N65S3L1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	76 mJ	14 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.19 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
NTD5807NG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	29.4 mJ	23 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.031 ohm	23 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NTMFS4C054NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	115 mJ	80 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.00356 ohm	12.4 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	46 pF
NVTFS6H880NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	83 A	70 mJ	22 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.038 ohm	6.6 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4 pF	AEC-Q101
NTMFS4C024NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	174 A	84 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.004 ohm	11.9 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	59 pF
NVMFS6H864NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	97 A	68 mJ	33 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.038 ohm	33 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	4 pF	AEC-Q101
NTMFS4C805NAT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	174 A	84 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.004 ohm	11.9 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	59 pF
NTMFS6H864NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	92 A	80 mJ	21 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Tin (Sn)	.053 ohm	21 A	DUAL	R-PDSO-F5		DRAIN				e3
FDMS0347	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	29 mJ	59 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	29 ns	-55 Cel	45 ns		.0063 ohm	22 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA		40	260	75 pF
FDMS7680	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	33 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A	29 mJ	53 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0069 ohm	14 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FCPF190N65S3R0L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	33 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42.5 A	76 mJ	17 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.19 ohm	17 A	SINGLE	R-PSFM-T3					TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.