33.8 W Power Field Effect Transistors (FET) 9

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BSZ42DN25NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33.8 W

PLASTIC/EPOXY

SWITCHING

250 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

40 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.425 ohm

5 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

FDPF6N60ZUT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33.8 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

150 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FDPF3860T

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33.8 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

278 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0382 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCPF13N60NT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33.8 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

235 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.258 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NTTFS4H07NTAG

Onsemi

N-CHANNEL

SINGLE

YES

33.8 W

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

66 A

1

e3

30

260

NTTFS4H07NTWG

Onsemi

N-CHANNEL

SINGLE

YES

33.8 W

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

66 A

1

e3

30

260

NTTFS015P03P8ZTWG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

195 A

47.6 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.012 ohm

13.4 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

875 pF

NTTFS015P03P8ZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

195 A

47.6 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.012 ohm

13.4 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

875 pF

BSZ42DN25NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33.8 W

PLASTIC/EPOXY

SWITCHING

250 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

20 A

40 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.425 ohm

5 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.