446 W Power Field Effect Transistors (FET) 18

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTHL040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

IPZ60R017C7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

495 A

582 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.017 ohm

109 A

SINGLE

R-PSFM-T4

ISOLATED

TO-247

e3

IRFPS37N50APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

144 A

1260 mJ

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e3

30

260

NTHL040N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

NTH4L040N65S3HFN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.04 ohm

65 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

NVH040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

NTH4L040N65S3F

Onsemi

N-CHANNEL

SINGLE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

446 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.04 ohm

65 A

SINGLE

R-PSFM-T4

ISOLATED

TO-247

e3

FCH085N80-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

138 A

1701 mJ

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

220 ns

-55 Cel

410 ns

Matte Tin (Sn) - annealed

.085 ohm

46 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

10 pF

NVHL040N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

AEC-Q101

NTHLD040N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.04 ohm

65 A

SINGLE

R-PSFM-T3

TO-247AD

e3

NVHL040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

65 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.04 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NVH4L040N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

162.5 A

1009 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.04 ohm

65 A

SINGLE

R-PSFM-T4

TO-247

e3

15.8 pF

AEC-Q101

IPZ60R017C7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

495 A

582 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.017 ohm

109 A

SINGLE

R-PSFM-T4

ISOLATED

TO-247

e3

IXFP34N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

2.6 pF

IXFP36N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

3.6 pF

IXFH34N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

2.6 pF

IXFA36N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

446 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.09 ohm

36 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

3.6 pF

IXFH36N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

750 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.09 ohm

36 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

3.6 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.