480 W Power Field Effect Transistors (FET) 58

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
IXTA150N15X4-7	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	1000 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0069 ohm	150 A	SINGLE	R-PSSO-G6	1	DRAIN		AVALANCHE RATED	TO-263	e3	10	260	4 pF
IXTP260N055T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	780 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.0033 ohm	260 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB	e1			215 pF
IXTH260N055T2	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	780 A	600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0033 ohm	260 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	215 pF
IXFT120N25X3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	230 A	1200 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.012 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				2 pF
IXTA340N04T4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	750 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0017 ohm	340 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AA	e3	10	260	1226 pF
IXTH150N15X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	480 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.0072 ohm	150 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				4 pF
IXTA260N055T2-7	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	780 A	600 mJ	260 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.0033 ohm	260 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263	e3	10	260
IXFT140N20X3HV	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	250 A	1700 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.0096 ohm	140 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-268AA				4.6 pF
IXTA230N075T2-7	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	700 A	850 mJ	230 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.0042 ohm	230 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263	e3	10	260
IXTA300N04T2-7	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	480 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	900 A	600 mJ	300 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.0025 ohm	300 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263	e3	10	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.