520 W Power Field Effect Transistors (FET) 42

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFP4668PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

520 A

760 mJ

130 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0097 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IRFP4468PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1120 A

740 mJ

290 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0026 ohm

195 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IRFP4368PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1280 A

430 mJ

350 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.00185 ohm

195 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IXTT1N450HV

Littelfuse

N-CHANNEL

SINGLE

YES

520 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1 A

1

e3

10

260

IXTH1N450HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

4500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.08 ohm

1 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

29 pF

IXTH2N300P3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

3000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

21 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

42 pF

IXTN21N100

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

84 A

21 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

.55 ohm

21 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

IXTH80N20L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

AMPLIFIER

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

2500 mJ

80 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.032 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

520 pF

IXTT80N20L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

520 W

PLASTIC/EPOXY

AMPLIFIER

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

2500 mJ

80 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.032 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

520 pF

APT10035JLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3000 mJ

25 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.35 ohm

25 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

160 pF

UL RECOGNIZED

IXFN73N30

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

300 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

292 A

73 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.045 ohm

73 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

APT50M65JFLL

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

232 A

3000 mJ

58 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.065 ohm

58 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

e1

UL RECOGNIZED

SIHG73N60E-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

236 A

2030 mJ

73 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

73 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

IXFN48N50U2

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.1 ohm

48 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN106N20

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

424 A

106 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.02 ohm

106 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN44N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

176 A

44 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.12 ohm

44 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

IXFN48N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.1 ohm

48 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

IXTT2N300P3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

520 W

PLASTIC/EPOXY

SWITCHING

3000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

21 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

42 pF

IXFN200N07

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

70 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

600 A

2000 mJ

200 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.006 ohm

200 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN21N100Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

84 A

2500 mJ

21 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.5 ohm

21 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN27N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

108 A

27 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.3 ohm

27 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXTT3N200P3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

520 W

PLASTIC/EPOXY

SWITCHING

2000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

8 ohm

3 A

SINGLE

R-PSSO-G2

DRAIN

TO-268AA

58 pF

MMIX1F132N50P3

Littelfuse

N-CHANNEL

SINGLE

YES

520 W

ENHANCEMENT MODE

1

63 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

63 A

MMIX1F210N30P3

Littelfuse

N-CHANNEL

SINGLE

YES

520 W

ENHANCEMENT MODE

1

108 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

108 A

IXFL36N110P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

2000 mJ

26 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.26 ohm

26 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXFL38N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

2000 mJ

29 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

29 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFL132N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

2000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.043 ohm

63 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

12 pF

IXFL36N100P

Littelfuse

N-CHANNEL

SINGLE

NO

520 W

ENHANCEMENT MODE

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

26 A

IXFQ170N15X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

1700 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0067 ohm

170 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

40 pF

IXFL210N30P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

550 A

4000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.016 ohm

108 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

42 pF

IXFL32N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

2000 mJ

24 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.34 ohm

24 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXKN75N60

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

300 A

3600 mJ

75 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.035 ohm

75 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

IXFH48N60X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

1400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

18 pF

IXTH3N200P3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

2000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

8 ohm

3 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

58 pF

IXFN32N60

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

128 A

32 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.25 ohm

32 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN36N60

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

144 A

36 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.18 ohm

36 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN200N06

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

60 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

600 A

2000 mJ

200 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.006 ohm

200 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN25N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.35 ohm

25 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFH46N65X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

65 A

1200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.073 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

18 pF

IXFT170N15X3HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

520 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

1700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0067 ohm

170 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

40 pF

IXFH170N15X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

1700 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0067 ohm

170 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

40 pF

IXFN150N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

560 A

150 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

NICKEL

.012 ohm

150 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.