6 W Power Field Effect Transistors (FET) 12

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
FDMC5614P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	23 A		5.7 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.1 ohm	5.7 A	DUAL	S-PDSO-F5	1	DRAIN	Not Qualified			e4	30	260
SI4143DY-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	45 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	179 ns	-55 Cel	128 ns	MATTE TIN	.0062 ohm	25.3 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	710 pF
BUK98150-55A,135	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	22 mJ	5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.161 ohm	5.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BUK98150-55A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	22 mJ	5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.161 ohm	5.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
IPN60R1K0PFD7SATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	10 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel		TIN	1 ohm	4.7 A	DUAL	R-PDSO-G3	1	DRAIN				e3
SI4100DY-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	18 mJ	6.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.063 ohm	4.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
PD84001-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	6 W	PLASTIC/EPOXY		18 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1			1.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON						1.5 A	DUAL	R-PDSO-F4			Not Qualified	ESD PROTECTED
BUK98150-55A/T3	NXP Semiconductors	N-CHANNEL	SINGLE	YES	6 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn)		5 A			1					e3
IPN60R2K0PFD7S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.5 A	5 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel		TIN	2 ohm	3 A	DUAL	R-PDSO-G3	1	DRAIN			TO-261	e3
IPN60R1K5PFD7S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	7 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel		TIN	1.5 ohm	3.6 A	DUAL	R-PDSO-G3	1	DRAIN			TO-261	e3
IPN60R1K0PFD7S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	10 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel		TIN	1 ohm	4.7 A	DUAL	R-PDSO-G3	1	DRAIN			TO-261	e3
NE5520379A	Renesas Electronics	N-CHANNEL	SINGLE	YES	6 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	85 Cel							1.5 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.