66 W Power Field Effect Transistors (FET) 117

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NP40N055DLE-S12-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

NP32N055ILE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055DHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.023 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

10

260

NP32N055SDE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.029 ohm

32 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

NP32N055SLE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NOT SPECIFIED

NOT SPECIFIED

NP40N055NLE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.032 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e3

NP32N055IHE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055CLE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.032 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

NP40N055KLE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.032 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

NP40N055KLE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.032 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

NP40N055ELE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP32N055IDE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055DHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

66 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

40 A

NP40N055MHE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NP32N055HDE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055KHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP32N055HHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055DHE-S12-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.023 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

NP32N055ILE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

10

260

NP32N055IHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.025 ohm

32 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

NP40N055EHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.023 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP40N055NHE-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e3

NP32N055IDE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

44 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.029 ohm

32 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

NP40N055ELE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP32N055IHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055SDE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055HDE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

7.8 mJ

32 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.029 ohm

32 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251AA

NP40N055DLE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

10

260

NP32N055HLE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

32 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.033 ohm

32 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

NP40N055DHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

40 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

NP32N055SDE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055CLE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

64 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.032 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

10

260

NP32N055SHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.025 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

NP32N055ILE-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055IHE-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055KHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.023 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

10

260

NP40N055EHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.023 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP40N055KHE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

66 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

NP32N055HLE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055HHE

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

66 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

49 mJ

32 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.025 ohm

32 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-251AA

e0

NP32N055IDE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP40N055KHE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

40 A

NP32N055SHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

10

260

NP32N055SDE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055SLE-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055IHE-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

10

260

NP32N055IHE-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

NP32N055IHE-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

66 W

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.